IAUCN04S7L009ATMA1 vs IAUCN04S7L042GATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7L009ATMA1 dari Infineon dan IAUCN04S7L042GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7L009ATMA1 IAUCN04S7L042GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUCN04S7L009ATMA1 —
Tipe Transistor N-Channel MOSFET —
Technology OptiMOS™ 7 (trench-gate) Trench N-Channel MOSFET
Drain-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id, Tc=25°C) 275 A (Tj) —
Continuous Drain Current (Id, Tc=100°C) 175 A —
Power Dissipation (Pd, Tc=25°C) 129 W —
Rds(on) Max @ Vgs=10V 0.91 mΩ —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical value] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Paket PG-TDSON-8-34 (TDSON EP) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
Tipe Mounting Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
Rentang Suhu Kerja -55 °C to +175 °C (Tj) -55C to +175C (Tj)
Automotive Qualification AEC-Q101 qualified —
Level MSL 1 1
Status RoHS Compliant Compliant
Product Family — OptiMOS 7 40V
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 77 A
Maximum Power Dissipation (PD, Tc) — 50 W
Polarity / Channel Type — N-Channel enhancement mode
Automotive Qualified — Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
Packing — Tape & Reel (per -ATMA1 suffix)
Target Substrate — IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg @ VGS=10V]

Spek dan Sumber

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