IAUCN04S7N019DATMA1 vs IAUCN04S7N037GATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7N019DATMA1 dari Infineon dan IAUCN04S7N037GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7N019DATMA1 IAUCN04S7N037GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 7 40V Trench MOSFET, N-Channel
Configuration Dual N-Channel (array) —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc) 160 A (Tj) —
Power Dissipation (PD, Tc) 96 W —
Paket PG-TDSON-8-60 (SuperSO8) SSO4G 5x6 mm² (PG-THSOG-4-1)
Tipe Mounting Surface Mount Surface Mount (IMS substrate attach compatible)
Suhu Hubung Kerja -55 C to +175 C —
Input Capacitance (Ciss, typ.) 1.465 nF —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Automotive Qualification AEC-Q101 (family) AEC-Q101
ESD Protection Yes (gate integrated) —
Level MSL 1 (per JEDEC J-STD-020, family default) [DATA_NEEDED: MSL level]
Status RoHS Compliant Compliant
Series — OptiMOS 7
Continuous Drain Current (ID) at Tj — 91 A
On-State Resistance RDS(on) typical — 3.65 mΩ at VGS = 10 V
Power Dissipation (PD) at Tc — 57 W
Channel Type — N-Channel
Operating Mode — Enhancement
Rentang Suhu Kerja — [DATA_NEEDED: junction/ambient temperature limits]
Gate Charge (Qg) typical — [DATA_NEEDED: total gate charge]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/range]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon