IAUCN04S7N024HATMA1 vs IAUCN04S7L042GATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7N024HATMA1 dari Infineon dan IAUCN04S7L042GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7N024HATMA1 IAUCN04S7L042GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS-7 40 V —
Configuration Dual N-Channel (independent) —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, Tj) 100 A —
On-Resistance R_DS(on) typ 2.46 mΩ at V_GS = 10 V —
On-Resistance R_DS(on) max [DATA_NEEDED: max R_DS(on) at 10 V V_GS] —
Maximum Power Dissipation (Tc) 75 W —
Paket PG-TDSON-8-56 (SSO8 HB 5x6 mm) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
Tipe Mounting Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] -55C to +175C (Tj)
Automotive Qualification AEC-Q101 —
Technology OptiMOS-7 trench-gate Trench N-Channel MOSFET
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: typical V_GS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total Qg] [DATA_NEEDED: Qg @ VGS=10V]
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020) 1
Packing Tape & Reel Tape & Reel (per -ATMA1 suffix)
Product Family — OptiMOS 7 40V
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 77 A
Maximum Power Dissipation (PD, Tc) — 50 W
Polarity / Channel Type — N-Channel enhancement mode
Automotive Qualified — Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
Target Substrate — IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]

Spek dan Sumber

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