IAUCN08S7L024ATMA1 vs IAUCN08S7L033ATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7L024ATMA1 by Infineon and IAUCN08S7L033ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7L024ATMA1
IAUCN08S7L024ATMA1 - 80V 2.4mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L024ATMA1 ✓ ActiveInfineon
IAUCN08S7L033ATMA1
IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 ✓ ActiveSpecification Comparison
| Parameter | IAUCN08S7L024ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.68 | $0.86 |
| Technology | OptiMOS™ 7 N-channel trench MOSFET | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID) | 177 A (Tj) | — |
| Continuous Drain Current (Silicon-limited) | 150 A | — |
| On-Resistance RDS(on) max | 2.4 mΩ at VGS=10 V | — |
| Power Dissipation (PD) | 148 W (Tc) | — |
| Package | PG-TDSON-8-34 (SSO8 5x6 mm²) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (Tj) | -55°C to +175°C (TJ) |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typ] | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Status | Compliant | Compliant |
| MSL Level | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for this package) |
| Manufacturer | — | Infineon Technologies |
| Series | — | Automotive OptiMOS 7 |
| Transistor Type | — | N-Channel MOSFET |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |