IAUS260N10S5N019TATMA1 vs IAUZ18N10S5L420ATMA1 Comparison
Detailed side-by-side comparison of IAUS260N10S5N019TATMA1 by Infineon and IAUZ18N10S5L420ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΞ© OptiMOS 5 MOSFET | Infineon
IAUS260N10S5N019TATMA1 β ActiveInfineon
IAUZ18N10S5L420ATMA1 - 100V 18A 42mΞ© N-Ch OptiMOS 5 | Infineon
IAUZ18N10S5L420ATMA1 β ActiveSpecification Comparison
| Parameter | IAUS260N10S5N019TATMA1 | IAUZ18N10S5L420ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.95 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-to-Source Voltage (Vds) | 100 V | β |
| Continuous Drain Current (Id) | 260 A (Tj) | β |
| On-State Resistance (Rds(on)) | 1.9 mΞ© (typical, 10 V Vgs) | β |
| Power Dissipation (Pd) | 300 W (Tc) | β |
| Package | PG-HDSOP-16-2 (TOLT, topside-cooled) | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 16 | β |
| Operating Temperature Range | -55 C to +175 C (Tj) | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | β |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Technology | OptiMOS 5 trench-gate | OptiMOS 5 trench |
| Automotive Qualified | Yes (IAUS prefix denotes automotive grade) | β |
| RoHS Status | Compliant | Compliant |
| Series | β | OptiMOS 5 100V |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 18 A |
| On-Resistance RDS(on) max at VGS=10V | β | 42 mΞ© |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | 1.7 V to 2.7 V |
| Total Gate Charge (Qg) typ. | β | 8.5 nC |
| Power Dissipation (PD) at TC=25Β°C | β | 30 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Automotive Qualification | β | AEC-Q101 qualified |
| Configuration | β | Single with built-in diode |
| MSL Level | β | 1 |