IAUS260N10S5N019TATMA1 vs IAUZ18N10S5L420ATMA1 Perbandingan

Perbandingan bersamaan detil IAUS260N10S5N019TATMA1 dari Infineon dan IAUZ18N10S5L420ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUZ18N10S5L420ATMA1 IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon

IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon

IAUZ18N10S5L420ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUS260N10S5N019TATMA1 IAUZ18N10S5L420ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 —
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-to-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) 260 A (Tj) —
On-State Resistance (Rds(on)) 1.9 mΩ (typical, 10 V Vgs) —
Power Dissipation (Pd) 300 W (Tc) —
Paket PG-HDSOP-16-2 (TOLT, topside-cooled) PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 16 —
Rentang Suhu Kerja -55 C to +175 C (Tj) —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] —
Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Technology OptiMOS 5 trench-gate OptiMOS 5 trench
Automotive Qualified Yes (IAUS prefix denotes automotive grade) —
Status RoHS Compliant Compliant
Series — OptiMOS 5 100V
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25°C — 18 A
On-Resistance RDS(on) max at VGS=10V — 42 mΩ
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — 1.7 V to 2.7 V
Total Gate Charge (Qg) typ. — 8.5 nC
Power Dissipation (PD) at TC=25°C — 30 W
Suhu Hubung Kerja — -55 °C to +175 °C
Automotive Qualification — AEC-Q101 qualified
Configuration — Single with built-in diode
Level MSL — 1

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