IAUS260N10S5N019TATMA1 vs IAUZ18N10S5L420ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUS260N10S5N019TATMA1 disebabkan oleh Infineon dan IAUZ18N10S5L420ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUZ18N10S5L420ATMA1 IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon

IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon

IAUZ18N10S5L420ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUS260N10S5N019TATMA1 IAUZ18N10S5L420ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-to-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) 260 A (Tj) —
On-State Resistance (Rds(on)) 1.9 mΩ (typical, 10 V Vgs) —
Power Dissipation (Pd) 300 W (Tc) —
Kemasan PG-HDSOP-16-2 (TOLT, topside-cooled) PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 16 —
Gambaran Suhu Operasi -55 C to +175 C (Tj) —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] —
Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Technology OptiMOS 5 trench-gate OptiMOS 5 trench
Automotive Qualified Yes (IAUS prefix denotes automotive grade) —
Status RoHS Compliant Compliant
Series — OptiMOS 5 100V
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25°C — 18 A
On-Resistance RDS(on) max at VGS=10V — 42 mΩ
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — 1.7 V to 2.7 V
Total Gate Charge (Qg) typ. — 8.5 nC
Power Dissipation (PD) at TC=25°C — 30 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Automotive Qualification — AEC-Q101 qualified
Configuration — Single with built-in diode
Aras MSL — 1

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