IAUS260N10S5N019TATMA1 vs IAUZ18N10S5L420ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUS260N10S5N019TATMA1 sa pamamagitan ng Infineon at IAUZ18N10S5L420ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΩ OptiMOS 5 MOSFET | Infineon
IAUS260N10S5N019TATMA1 ✓ NakahandaInfineon
IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon
IAUZ18N10S5L420ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUS260N10S5N019TATMA1 | IAUZ18N10S5L420ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 | — |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-to-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) | 260 A (Tj) | — |
| On-State Resistance (Rds(on)) | 1.9 mΩ (typical, 10 V Vgs) | — |
| Power Dissipation (Pd) | 300 W (Tc) | — |
| Packhaging | PG-HDSOP-16-2 (TOLT, topside-cooled) | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 16 | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (Tj) | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Technology | OptiMOS 5 trench-gate | OptiMOS 5 trench |
| Automotive Qualified | Yes (IAUS prefix denotes automotive grade) | — |
| Tindminan RoHS | Compliant | Compliant |
| Series | — | OptiMOS 5 100V |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25°C | — | 18 A |
| On-Resistance RDS(on) max at VGS=10V | — | 42 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.7 V to 2.7 V |
| Total Gate Charge (Qg) typ. | — | 8.5 nC |
| Power Dissipation (PD) at TC=25°C | — | 30 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 qualified |
| Configuration | — | Single with built-in diode |
| Level ng MSL | — | 1 |