IAUT300N08S5N014ATMA1 vs IAUT300N08S5N011ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUT300N08S5N014ATMA1 sa pamamagitan ng Infineon at IAUT300N08S5N011ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUT300N08S5N014ATMA1 IAUT300N08S5N014ATMA1 - 80V 300A 1.4mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N014ATMA1 - 80V 300A 1.4mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N014ATMA1 ✓ Nakahanda
Infineon
IAUT300N08S5N011ATMA1 IAUT300N08S5N011ATMA1 - 80V N-Ch 1.1mOhm Automotive MOSFET

IAUT300N08S5N011ATMA1 - 80V N-Ch 1.1mOhm Automotive MOSFET

IAUT300N08S5N011ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUT300N08S5N014ATMA1 IAUT300N08S5N011ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel, Enhancement Mode N-Channel
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at TC=25°C 300 A (DC) —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Gate-Source Voltage (VGS) Max ±20 V (typ) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
On-Resistance RDS(on) typ @ VGS=10V 1.4 mΩ —
On-Resistance RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) max] —
Power Dissipation PD @ TC=25°C 300 W —
Temperature ng Junction na Operasyon -55 °C to +175 °C —
Packhaging PG-HSOF-8-1 (8-pin + tab, Surface Mount) PG-HSOF-8-1 (TOLL 10x12 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
MSL (Moisture Sensitivity Level) MSL1 (unlimited floor life at ≤30 °C / 85 % RH) —
Peak Reflow Temperature 260 °C —
Automotive Qualification AEC-Q101 —
Avalanche Tested 100 % (per Infineon datasheet) —
RoHS Compliance Compliant (Green Product) —
Technology Family OptiMOS 5 (Infineon) —
Technology — OptiMOS 5 (trench MOSFET)
Drain-Source Voltage (V_DS) — 80 V
Continuous Drain Current (I_D, T_C=25C) — 300 A
Pulsed Drain Current (I_DM) — 410 A (Tj)
R_DS(on) max — 1.10 mOhm at V_GS=10 V
Gate Threshold Voltage (V_GS(th)) — 3.8 V
Total Gate Charge (Q_g) — 231 nC at V_GS=10 V
Input Capacitance (C_iss) — 16.25 nF
Output Capacitance (C_oss) — 2.6 nF
Reverse Transfer Capacitance (C_rss) — 130 pF
Power Dissipation (P_D) — 375 W at T_C=25C
Hanay ng Temperature na Operasyon — -55C to +175C
Level ng MSL — 1
Qualification — Automotive (AEC-Q101)

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