IAUTN04S7N003ATMA1 vs IAUCN04S7N015GATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IAUTN04S7N003ATMA1 tarafından Infineon ve IAUCN04S7N015GATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUTN04S7N003ATMA1 - 40V 350A OptiMOS 7 N-Channel MOSFET | Infineon
IAUTN04S7N003ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IAUTN04S7N003ATMA1 | IAUCN04S7N015GATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Technology | OptiMOS 7 N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tj | 350 A | — |
| Power Dissipation (PD) at Tc=25°C | 357 W | — |
| RDS(on) max at VGS=10V | 0.24 mOhm (typical) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Avalanche Single-Pulse Current | [DATA_NEEDED: IAS] | — |
| Body Diode Continuous Forward Current | 350 A (Tj = 25 °C) | — |
| Body Diode Pulse Current | 3510 A (tp = 100 µs, Tj = 25 °C) | — |
| Body Diode Forward Voltage (VSD) | 0.95 V max (0.8 V typ) at IS = 100 A | — |
| Reverse Recovery Time (trr) | 83 ns typical / 125 ns max | — |
| Reverse Recovery Charge (Qrr) | 126 nC typical / 252 nC max | — |
| İşletim Sıcaklığı Aralığı | -55 °C to +175 °C (Tj) | — |
| Paket | PG-HSOF-8-9 (TOLL, 10x12 mm, surface mount) | PG-THSOG-4-1 (SSO4G 5x6) surface mount |
| Montaj Türü | Surface Mount | Surface Mount (IMS-compatible source-down) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Durumu | Compliant | Compliant |
| MSL Seviyesi | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 165 A (Tc) |
| Power Dissipation (P_D) | — | 96 W (Tc) |
| R_DS(on) max | — | 1.53 mΩ at V_GS=10 V |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| İşletim Jant Sıcaklığı | — | -55C to +175C |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |