IAUTN04S7N003ATMA1 vs IAUCN04S7N015GATMA1 Perbandingan
Perbandingan bersamaan detil IAUTN04S7N003ATMA1 dari Infineon dan IAUCN04S7N015GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUTN04S7N003ATMA1 - 40V 350A OptiMOS 7 N-Channel MOSFET | Infineon
IAUTN04S7N003ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUTN04S7N003ATMA1 | IAUCN04S7N015GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 7 N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tj | 350 A | — |
| Power Dissipation (PD) at Tc=25°C | 357 W | — |
| RDS(on) max at VGS=10V | 0.24 mOhm (typical) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Avalanche Single-Pulse Current | [DATA_NEEDED: IAS] | — |
| Body Diode Continuous Forward Current | 350 A (Tj = 25 °C) | — |
| Body Diode Pulse Current | 3510 A (tp = 100 µs, Tj = 25 °C) | — |
| Body Diode Forward Voltage (VSD) | 0.95 V max (0.8 V typ) at IS = 100 A | — |
| Reverse Recovery Time (trr) | 83 ns typical / 125 ns max | — |
| Reverse Recovery Charge (Qrr) | 126 nC typical / 252 nC max | — |
| Rentang Suhu Kerja | -55 °C to +175 °C (Tj) | — |
| Paket | PG-HSOF-8-9 (TOLL, 10x12 mm, surface mount) | PG-THSOG-4-1 (SSO4G 5x6) surface mount |
| Tipe Mounting | Surface Mount | Surface Mount (IMS-compatible source-down) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 165 A (Tc) |
| Power Dissipation (P_D) | — | 96 W (Tc) |
| R_DS(on) max | — | 1.53 mΩ at V_GS=10 V |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Suhu Hubung Kerja | — | -55C to +175C |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |