IAUZ30N10S5L240ATMA1 vs IAUZ40N10S5N130ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZ30N10S5L240ATMA1 disebabkan oleh Infineon dan IAUZ40N10S5N130ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUZ30N10S5L240ATMA1 IAUZ40N10S5N130ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 5 (trench) OptiMOS 5 (super-junction trench)
Drain-Source Voltage (V_DS) 100 V —
Continuous Drain Current (I_D, Tc) 30 A —
R_DS(on) max at V_GS=10V 24 mΩ —
Gate-Source Voltage (V_GS) max ±20 V —
Gate Charge (Q_g) typ 14 nC at V_GS=10V —
Input Capacitance (C_iss) typ 832 pF at V_DS=50V —
Power Dissipation (P_D, Tc) 45.5 W —
Kemasan PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) PG-TSDSON-8-33 (S3O8), 3.3 × 3.3 mm
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55°C to +175°C (junction, automotive grade) -55°C to +175°C (TJ)
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) value] —
Status RoHS Compliant —
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen-free status] —
Manufacturer — Infineon Technologies
Part Number — IAUZ40N10S5N130ATMA1
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc=25°C — 40 A
Pulsed Drain Current (IDM) — 160 A
RDS(on) max at VGS=10V — 13 mΩ
RDS(on) typical — 10 mΩ
Maximum Power Dissipation (Tc) — 68 W
Lead-Free / RoHS — ROHS3 Compliant

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