IAUZ30N10S5L240ATMA1 vs IAUZ40N10S5N130ATMA1 Perbandingan

Perbandingan bersamaan detil IAUZ30N10S5L240ATMA1 dari Infineon dan IAUZ40N10S5N130ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUZ30N10S5L240ATMA1 IAUZ40N10S5N130ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 5 (trench) OptiMOS 5 (super-junction trench)
Drain-Source Voltage (V_DS) 100 V —
Continuous Drain Current (I_D, Tc) 30 A —
R_DS(on) max at V_GS=10V 24 mΩ —
Gate-Source Voltage (V_GS) max ±20 V —
Gate Charge (Q_g) typ 14 nC at V_GS=10V —
Input Capacitance (C_iss) typ 832 pF at V_DS=50V —
Power Dissipation (P_D, Tc) 45.5 W —
Paket PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) PG-TSDSON-8-33 (S3O8), 3.3 × 3.3 mm
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55°C to +175°C (junction, automotive grade) -55°C to +175°C (TJ)
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) value] —
Status RoHS Compliant —
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen-free status] —
Manufacturer — Infineon Technologies
Part Number — IAUZ40N10S5N130ATMA1
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc=25°C — 40 A
Pulsed Drain Current (IDM) — 160 A
RDS(on) max at VGS=10V — 13 mΩ
RDS(on) typical — 10 mΩ
Maximum Power Dissipation (Tc) — 68 W
Lead-Free / RoHS — ROHS3 Compliant

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