IAUZN08S7L177ATMA1 vs IAUCN04S7L042GATMA1 Perbandingan

Perbandingan bersamaan detil IAUZN08S7L177ATMA1 dari Infineon dan IAUCN04S7L042GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUZN08S7L177ATMA1 IAUZN08S7L177ATMA1 - 80V 35A OptiMOS 7 N-MOSFET | Infineon

IAUZN08S7L177ATMA1 - 80V 35A OptiMOS 7 N-MOSFET | Infineon

IAUZN08S7L177ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUZN08S7L177ATMA1 IAUCN04S7L042GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 7 N-channel power MOSFET Trench N-Channel MOSFET
Drain-Source Voltage (VDS) 80 V 40 V
Continuous Drain Current (ID) 35 A (Tj) —
Power Dissipation (PD) 45 W (Tc) —
On-Resistance (RDS(on)) 17.7 mΩ max —
Paket PG-TSDSON-8-44 (S3O8, 3x3 mm²) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
Tipe Mounting Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
Polarity N-Channel —
Suhu Kerja -55C to +175C (Tj, automotive grade) —
Configuration Single —
Qualification AEC-Q101 automotive —
Level MSL 1 (per JEDEC J-STD-020) 1
Lead-Free Yes —
Status RoHS Compliant Compliant
Family Infineon OptiMOS 7 automotive, 80 V —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7 40V
Continuous Drain Current (ID, Tj) — 77 A
Maximum Power Dissipation (PD, Tc) — 50 W
Rentang Suhu Kerja — -55C to +175C (Tj)
Polarity / Channel Type — N-Channel enhancement mode
Automotive Qualified — Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
Packing — Tape & Reel (per -ATMA1 suffix)
Target Substrate — IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg @ VGS=10V]

Spek dan Sumber

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