IDDD10G65C6XTMA1 vs IDL04G65C5XUMA2 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IDDD10G65C6XTMA1 sa pamamagitan ng Infineon at IDL04G65C5XUMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IDDD10G65C6XTMA1 IDDD10G65C6XTMA1 - 650V 29A SiC Schottky Diode | Infineon

IDDD10G65C6XTMA1 - 650V 29A SiC Schottky Diode | Infineon

IDDD10G65C6XTMA1 ✓ Nakahanda
Infineon
IDL04G65C5XUMA2 IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IDDD10G65C6XTMA1 IDL04G65C5XUMA2
Brand Infineon Infineon
Kategorya Diodes Diodes
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC+ 6th Generation CoolSiC™ Schottky Diode Generation 5
Diode Type Silicon Carbide (SiC) Schottky Silicon Carbide (SiC) Schottky
Configuration Single Diode —
Repetitive Peak Reverse Voltage (VRRM) 650 V —
Average Rectified Forward Current (IF(AV)) 29 A —
Non-Repetitive Peak Forward Surge Current (IFSM) [DATA_NEEDED: IFSM value] —
Forward Voltage (VF) at IF 1.5 V typical at 10 A —
Reverse Recovery Charge (Qc) Zero (no minority carrier storage) —
Reverse Recovery Time (trr) 0 ns (Schottky, no recovery) —
Hanay ng Temperature ng Junction na Operasyon -55 C to +175 C —
Packhaging PG-HDSOP-10-1 (10-pin HDSOP with exposed pad) PG-VSON-4 (DPAK real2pin) Surface Mount
Uri ng Pagpapasok Surface Mount (Tape & Reel) Surface Mount, Tape & Reel
Lead-Free / RoHS Yes / Compliant —
Level ng MSL MSL 1 (per JEDEC J-STD-020) —
Typical Application PFC, totem-pole PFC, solar inverter, EV OBC —
Repetitive Peak Reverse Voltage (V_RRM) — 650 V
Continuous Forward Current (I_F(AV)) — 4 A
Total Capacitive Charge (Q_C) — 7 nC (typical)
Forward Voltage (V_F) — 1.7 V at 4 A (typical, per datasheet)
Reverse Leakage Current (I_R) — 70 µA at 650 V
Junction Capacitance (C_J) — 130 pF at 1 V, 1 MHz
Reverse Recovery Time (t_rr) — 0 ns (Schottky, no minority-carrier storage)
Temperature ng Junction na Operasyon — -55°C to +175°C
Bilang ng Pin — 4 (with exposed thermal pad)
RoHS / REACH — RoHS Compliant (per Infineon product page)

Mga Datasheets at Resources

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