IDDD10G65C6XTMA1 - 650V 29A SiC Schottky Diode | Infineon
MPN: IDDD10G65C6XTMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.95 | $3.95 |
| 10 | $3.55 | $35.50 |
| 100 | $3.15 | $315.00 |
| 500 | $2.75 | $1,375.00 |
| 1,000 | $2.4 | $2,400.00 |
IDDD10G65C6XTMA1 Overview
What is a SiC Schottky diode? A silicon-carbide Schottky diode is a wide-bandgap power diode that uses a metal-semiconductor junction (Schottky barrier) instead of a PN junction, eliminating stored minority-carrier charge. In the broader discrete-semiconductor hierarchy it sits as: SiC Schottky diode -> wide-bandgap diode -> power rectifier -> discrete semiconductor. Compared with silicon ultrafast recovery diodes, SiC Schottky parts switch near-instantaneously, drastically reducing switching loss and allowing higher frequency operation in switch-mode power supplies.
Key differentiating specifications include a maximum repetitive peak reverse voltage (VRRM) of 650V, a non-repetitive peak forward surge current (IFSM) supporting transient events, and a positive temperature coefficient on VF that promotes easy paralleling for high-current modules. The exposed-pad HDSOP-10-1 package provides a thermal resistance optimized for cold-plate or PCB-copper cooling, enabling compact power-density designs.
Technically, the 6th-generation Infineon CoolSiC+ die merges an optimized Schottky barrier metal with field-ring termination to balance leakage current against surge capability. Designers benefit from the absence of reverse recovery, which simplifies EMI filtering and reduces snubber losses in continuous-conduction-mode PFC and DC-DC stages.
Typical applications include totem-pole bridgeless PFC in telecom/server SMPS, solar string inverters, on-board chargers for EVs, industrial motor drives, and DC fast-charging stations. The part is also widely used as an anti-parallel (freewheeling) diode across IGBT or super-junction MOSFET half-bridges.
When designing in this diode, observe the recommended land pattern for PG-HDSOP-10-1, minimize parasitic loop inductance, and ensure the exposed pad is soldered to a sufficient copper area to meet the datasheet thermal resistance target. Use a Kelvin source connection when paired with a MOSFET for clean gate drive.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, supporting rapid component selection for high-frequency, high-efficiency power converters.
Drop-in alternatives for IDDD10G65C6XTMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IDDD10G65C6XTMA1 (same form factor and footprint) β differing in Mounting Type, Package, Product Family.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IDL04G65C5XUMA2
β Drop-Inβ In Stock
$0.92 / Unit
View Datasheet βIDD05SG60CXTMA2
β Drop-Inπ Reference alternative (not in catalog)
IDDD20G65C6XTMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IDDD06G65C6XTMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IDDD15G65C6XTMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IDDD10G65C6XTMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolSiC+ 6th Generation |
| Diode Type | Silicon Carbide (SiC) Schottky |
| Configuration | Single Diode |
| Repetitive Peak Reverse Voltage (VRRM) | 650 V |
| Average Rectified Forward Current (IF(AV)) | 29 A |
| Forward Voltage (VF) at IF | 1.5 V typical at 10 A |
| Reverse Recovery Charge (Qc) | Zero (no minority carrier storage) |
| Reverse Recovery Time (trr) | 0 ns (Schottky, no recovery) |
| Operating Junction Temperature Range | -55 C to +175 C |
| Package | PG-HDSOP-10-1 (10-pin HDSOP with exposed pad) |
| Mounting Type | Surface Mount (Tape & Reel) |
| Lead-Free / RoHS | Yes / Compliant |
| MSL Level | MSL 1 (per JEDEC J-STD-020) |
| Typical Application | PFC, totem-pole PFC, solar inverter, EV OBC |
IDDD10G65C6XTMA1 Pin Configuration
| Pin 1 | Cathode (K) β Diode cathode / anode-return |
| Pin 2 | Cathode (K) β Diode cathode (paralleled pad) |
| Pin 3 | Anode (A) β Diode anode |
| Pin 4 | Anode (A) β Diode anode (paralleled pad) |
| Pin 5 | Anode (A) β Diode anode (paralleled pad) |
| Pin 6 | NC β Not connected (per datasheet) |
| Pin 7 | NC β Not connected (per datasheet) |
| Pin 8 | Cathode (K) β Diode cathode (paralleled pad) |
| Pin 9 | Cathode (K) β Diode cathode (paralleled pad) |
| Pin 10 | Exposed Pad β Thermal pad - connect to cathode potential or floating per layout |
Forward Current vs Forward Voltage (typical)
Typical Applications
IDDD10G65C6XTMA1 is suitable for 6 applications: Totem-Pole Bridgeless PFC, EV On-Board Charger (OBC), Solar String Inverter, Industrial Motor Drive, DC Fast Charging Station, Telecom / Server SMPS.
Totem-Pole Bridgeless PFC
The IDDD10G65C6XTMA1 is purpose-built for totem-pole bridgeless PFC in 3-6 kW telecom and server SMPS. Its zero Qc eliminates the slow-body-diode recovery issue that traditionally blocked this topology with silicon MOSFETs, enabling continuous-conduction-mode (CCM) operation at 65-100 kHz with 99%+ achievable efficiency. The 650V VRRM provides margin above 400V DC-link rails, and the 29A IF(AV) supports a single diode per switching leg without paralleling.
Recommended
EV On-Board Charger (OBC)
In 6.6-22 kW EV on-board chargers, the IDDD10G65C6XTMA1 serves as the boost or freewheeling diode in the PFC and DC-DC stages. Its 650V blocking capability accommodates rectified 400V battery buses plus transient overshoot, while the zero recovery charge dramatically reduces switching loss versus silicon ultrafast diodes at the 100-200 kHz operating frequencies typical of modern OBC designs. The exposed-pad HDSOP-10-1 package enables direct cold-plate attachment for liquid-cooled OBC modules.
Recommended
Solar String Inverter
The IDDD10G65C6XTMA1 fits solar string inverter boost and three-phase PFC stages where 650V reverse blocking and zero reverse recovery directly translate into higher European weighted efficiency (typically +0.3-0.5% versus silicon ultrafast designs). The 29A IF(AV) rating supports 10-15 kW residential and small-commercial string inverters in a single-leg configuration, simplifying layout and reducing BOM cost. The wide -55C to +175C junction range tolerates outdoor enclosure thermal extremes.
Recommended
Industrial Motor Drive
In 400V-class industrial variable-frequency drives (VFDs), the IDDD10G65C6XTMA1 is used as a freewheeling diode across IGBT or super-junction MOSFET half-bridges. Its zero Qc eliminates reverse-recovery-induced voltage spikes on the DC bus, reducing snubber requirements and EMC filter complexity. The 650V rating comfortably handles 480V rectified industrial mains with standard 80% derating, and the HDSOP-10-1 package supports high-power-density inverter modules up to 15 kW.
Recommended
DC Fast Charging Station
In 50-350 kW DC fast-charging stations, the IDDD10G65C6XTMA1 can be deployed in the auxiliary PFC, the LLC resonant converter secondary rectification (in parallel arrays), or the auxiliary power supply where its zero recovery loss improves overall system efficiency. The 29A IF(AV) per device allows designers to build high-current rectifiers with fewer parallel parts than silicon solutions, reducing conduction imbalance and thermal complexity. AEC-Q101 stress test compatibility is a plus for automotive-grade charging infrastructure.
Recommended
Telecom / Server SMPS
The IDDD10G65C6XTMA1 targets 3-5 kW 80PLUS Titanium-grade telecom and hyperscale server SMPS where every fraction of a percent efficiency translates to megawatts of energy saved annually. In continuous-conduction-mode interleaved PFC running at 65-130 kHz, the zero Qc of this SiC Schottky diode removes the reverse-recovery loss that limits silicon ultrafast designs, typically boosting efficiency by 0.5-1.0%. The PG-HDSOP-10-1 package with exposed pad enables top-side cooling for 1U and 2U form-factor power supplies.
Recommended
Recommended Products Summary
Engineering reference data for IDDD10G65C6XTMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IDL04G65C5XUMA2 | IDD05SG60CXTMA2 | IDDD20G65C6XTMA1 | IDDD15G65C6XTMA1 | IDDD06G65C6XTMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-HDSOP-10-1 | PG-HDSOP-10-1 - same | PG-HDSOP-10-1 - same | PG-HDSOP-10-1 - same | PG-HDSOP-10-1 - same | PG-HDSOP-10-1 - same |
| VRRM (V) | 650 | 650 | 600 | 650 | 650 | 650 |
| IF(AV) (A) | 29 | 4 | 5 | 20 | 15 | 6 |
| Technology | SiC Schottky (6th-gen CoolSiC+) | SiC Schottky (CoolSiC) | SiC Schottky (CoolSiC) | SiC Schottky (6th-gen) | SiC Schottky (6th-gen) | SiC Schottky (6th-gen) |
| Reverse Recovery Charge Qc | Zero | Zero | Zero | Zero | Zero | Zero |
| Junction Temperature (C) | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 |
| Approx. Unit Price @ 1k (USD, as of 2026-09-15) | $2.40 | $1.85 | $1.95 | $3.10 | $2.75 | $1.70 |
Key Differentiators
- Higher continuous current in same PG-HDSOP-10-1 footprint vs older 600V SiC diodes (vs IDD05SG60CXTMA2)
- Lower VF at high current vs prior-generation CoolSiC 5th-gen diodes (vs IDL04G65C5XUMA2)
- Cost-optimized alternative within same family for derated designs (vs IDDD20G65C6XTMA1)
Design Notes
The PG-HDSOP-10-1 package's thermal performance depends almost entirely on PCB copper area connected to the exposed pad. For the rated 29A continuous current, Infineon's datasheet recommends a minimum copper pour of approximately 6 cm^2 on a 4-layer FR4 board with thermal vias. Designers pushing near maximum IF(AV) should evaluate a cold-plate or top-side heatsink, especially in enclosed industrial or automotive environments where ambient temperature exceeds 60C. Estimated: with 1 oz copper on 4 layers and 16 thermal vias, theta_JA is approximately 35-40 C/W.
Minimize the commutating loop inductance between the SiC diode and its companion MOSFET to limit voltage overshoot during switching. Place the diode as close as physically possible to the MOSFET drain/source pads, and use wide, short copper pours. A 0.1-1 uF snubber or RC damper (typically 10 ohm + 100 pF) across the diode is recommended for high-frequency hard-switched topologies where parasitic inductance exceeds 20 nH.
Do not parallel SiC Schottky diodes without considering thermal run-away risk: although VF has a positive temperature coefficient that aids current sharing, even small PCB-layout asymmetries can produce 10-20% current imbalance at 29A. For currents above 50A, prefer a single higher-rated IDDD20G65C6XTMA1 over two parallel IDDD10G65C6XTMA1s. Also verify gate-drive timing in totem-pole PFC to avoid simultaneous conduction across the AC half-cycle, which would bypass the diode advantage.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified as a standalone discrete diode; consult Infineon for automotive-grade part numbers if required.
