IDDD10G65C6XTMA1 vs IDL04G65C5XUMA2 比較

詳細並排比較 IDDD10G65C6XTMA1 由 Infineon 與 IDL04G65C5XUMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IDDD10G65C6XTMA1 IDDD10G65C6XTMA1 - 650V 29A SiC Schottky Diode | Infineon

IDDD10G65C6XTMA1 - 650V 29A SiC Schottky Diode | Infineon

IDDD10G65C6XTMA1 ✓ 啟用中
Infineon
IDL04G65C5XUMA2 IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 ✓ 啟用中

規格比較

參數 IDDD10G65C6XTMA1 IDL04G65C5XUMA2
品牌 Infineon Infineon
類別 Diodes Diodes
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC+ 6th Generation CoolSiC™ Schottky Diode Generation 5
Diode Type Silicon Carbide (SiC) Schottky Silicon Carbide (SiC) Schottky
Configuration Single Diode —
Repetitive Peak Reverse Voltage (VRRM) 650 V —
Average Rectified Forward Current (IF(AV)) 29 A —
Non-Repetitive Peak Forward Surge Current (IFSM) [DATA_NEEDED: IFSM value] —
Forward Voltage (VF) at IF 1.5 V typical at 10 A —
Reverse Recovery Charge (Qc) Zero (no minority carrier storage) —
Reverse Recovery Time (trr) 0 ns (Schottky, no recovery) —
工作接面溫度範圍 -55 C to +175 C —
封裝 PG-HDSOP-10-1 (10-pin HDSOP with exposed pad) PG-VSON-4 (DPAK real2pin) Surface Mount
安裝類型 Surface Mount (Tape & Reel) Surface Mount, Tape & Reel
Lead-Free / RoHS Yes / Compliant —
MSL 等級 MSL 1 (per JEDEC J-STD-020) —
Typical Application PFC, totem-pole PFC, solar inverter, EV OBC —
Repetitive Peak Reverse Voltage (V_RRM) — 650 V
Continuous Forward Current (I_F(AV)) — 4 A
Total Capacitive Charge (Q_C) — 7 nC (typical)
Forward Voltage (V_F) — 1.7 V at 4 A (typical, per datasheet)
Reverse Leakage Current (I_R) — 70 µA at 650 V
Junction Capacitance (C_J) — 130 pF at 1 V, 1 MHz
Reverse Recovery Time (t_rr) — 0 ns (Schottky, no minority-carrier storage)
工作接面溫度 — -55°C to +175°C
腳位數 — 4 (with exposed thermal pad)
RoHS / REACH — RoHS Compliant (per Infineon product page)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價