IDL04G65C5XUMA2 vs IGLT65R035D2ATMA1 Comparison

Detailed side-by-side comparison of IDL04G65C5XUMA2 by Infineon and IGLT65R035D2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IDL04G65C5XUMA2 IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 ✓ Active

Specification Comparison

Parameter IDL04G65C5XUMA2 IGLT65R035D2ATMA1
Brand Infineon Infineon
Category Diodes MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.92 $5.10
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC™ Schottky Diode Generation 5 CoolGaN™ G5 TOLT
Diode Type Silicon Carbide (SiC) Schottky —
Repetitive Peak Reverse Voltage (V_RRM) 650 V —
Continuous Forward Current (I_F(AV)) 4 A —
Total Capacitive Charge (Q_C) 7 nC (typical) —
Forward Voltage (V_F) 1.7 V at 4 A (typical, per datasheet) —
Reverse Leakage Current (I_R) 70 µA at 650 V —
Junction Capacitance (C_J) 130 pF at 1 V, 1 MHz —
Reverse Recovery Time (t_rr) 0 ns (Schottky, no minority-carrier storage) —
Operating Junction Temperature -55°C to +175°C —
Package PG-VSON-4 (DPAK real2pin) Surface Mount PG-HDSOP-16-8 (top-side cooled)
Mounting Type Surface Mount, Tape & Reel Surface Mount
Pin Count 4 (with exposed thermal pad) —
RoHS / REACH RoHS Compliant (per Infineon product page) —
Transistor Type — N-Channel enhancement-mode GaN HEMT
Drain-Source Voltage (Vdss) — 650 V
Continuous Drain Current (Id) at Tc — 47 A
Maximum Power Dissipation (Pd) at Tc — 154 W
On-Resistance (Rds(on)) — [DATA_NEEDED: typical Rds(on) in mohm]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: typical Vgs(th)]
Input Capacitance (Ciss) at Vds=400V — 540 pF
Operating Temperature Range — [DATA_NEEDED: Tj min/max]
Cooling Configuration — Top-side cooled (TOLT)
MSL Level — [DATA_NEEDED: MSL rating]
RoHS Status — Compliant
Lead-Free — Yes
Production Wafer Size — 200 mm (8 inch)

Datasheets & Resources

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