IDL04G65C5XUMA2 vs IGLT65R035D2ATMA1 비교

다음의 상세 나란히 비교: IDL04G65C5XUMA2 제조: Infineon 및 IGLT65R035D2ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IDL04G65C5XUMA2 IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 ✓ 활성

사양 비교

파라미터 IDL04G65C5XUMA2 IGLT65R035D2ATMA1
브랜드 Infineon Infineon
카테고리 Diodes MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.92 $5.10
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC™ Schottky Diode Generation 5 CoolGaN™ G5 TOLT
Diode Type Silicon Carbide (SiC) Schottky —
Repetitive Peak Reverse Voltage (V_RRM) 650 V —
Continuous Forward Current (I_F(AV)) 4 A —
Total Capacitive Charge (Q_C) 7 nC (typical) —
Forward Voltage (V_F) 1.7 V at 4 A (typical, per datasheet) —
Reverse Leakage Current (I_R) 70 µA at 650 V —
Junction Capacitance (C_J) 130 pF at 1 V, 1 MHz —
Reverse Recovery Time (t_rr) 0 ns (Schottky, no minority-carrier storage) —
동작 접합 온도 -55°C to +175°C —
패키지 PG-VSON-4 (DPAK real2pin) Surface Mount PG-HDSOP-16-8 (top-side cooled)
실장 유형 Surface Mount, Tape & Reel Surface Mount
핀 수 4 (with exposed thermal pad) —
RoHS / REACH RoHS Compliant (per Infineon product page) —
트랜지스터 유형 — N-Channel enhancement-mode GaN HEMT
Drain-Source Voltage (Vdss) — 650 V
Continuous Drain Current (Id) at Tc — 47 A
Maximum Power Dissipation (Pd) at Tc — 154 W
On-Resistance (Rds(on)) — [DATA_NEEDED: typical Rds(on) in mohm]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: typical Vgs(th)]
Input Capacitance (Ciss) at Vds=400V — 540 pF
동작 온도 범위 — [DATA_NEEDED: Tj min/max]
Cooling Configuration — Top-side cooled (TOLT)
MSL 레벨 — [DATA_NEEDED: MSL rating]
RoHS 상태 — Compliant
Lead-Free — Yes
Production Wafer Size — 200 mm (8 inch)

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청