IDL04G65C5XUMA2 vs IGLT65R035D2ATMA1 对比

详细并排对比 IDL04G65C5XUMA2 出自 Infineon 和 IGLT65R035D2ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IDL04G65C5XUMA2 IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 ✓ 量产中
Infineon
IGLT65R035D2ATMA1 IGLT65R035D2ATMA1 - 650V 47A CoolGaN™ G5 Transistor | Infineon

IGLT65R035D2ATMA1 - 650V 47A CoolGaN™ G5 Transistor | Infineon

IGLT65R035D2ATMA1 ✓ 量产中

规格对比

参数 IDL04G65C5XUMA2 IGLT65R035D2ATMA1
品牌 Infineon Infineon
分类 Diodes MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.92 $5.10
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC™ Schottky Diode Generation 5 CoolGaN™ G5 TOLT
Diode Type Silicon Carbide (SiC) Schottky —
Repetitive Peak Reverse Voltage (V_RRM) 650 V —
Continuous Forward Current (I_F(AV)) 4 A —
Total Capacitive Charge (Q_C) 7 nC (typical) —
Forward Voltage (V_F) 1.7 V at 4 A (typical, per datasheet) —
Reverse Leakage Current (I_R) 70 µA at 650 V —
Junction Capacitance (C_J) 130 pF at 1 V, 1 MHz —
Reverse Recovery Time (t_rr) 0 ns (Schottky, no minority-carrier storage) —
工作结温 -55°C to +175°C —
封装 PG-VSON-4 (DPAK real2pin) Surface Mount PG-HDSOP-16-8 (top-side cooled)
安装类型 Surface Mount, Tape & Reel Surface Mount
引脚数量 4 (with exposed thermal pad) —
RoHS / REACH RoHS Compliant (per Infineon product page) —
晶体管类型 — N-Channel enhancement-mode GaN HEMT
Drain-Source Voltage (Vdss) — 650 V
Continuous Drain Current (Id) at Tc — 47 A
Maximum Power Dissipation (Pd) at Tc — 154 W
On-Resistance (Rds(on)) — [DATA_NEEDED: typical Rds(on) in mohm]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: typical Vgs(th)]
Input Capacitance (Ciss) at Vds=400V — 540 pF
工作温度范围 — [DATA_NEEDED: Tj min/max]
Cooling Configuration — Top-side cooled (TOLT)
MSL 等级 — [DATA_NEEDED: MSL rating]
RoHS 状态 — Compliant
Lead-Free — Yes
Production Wafer Size — 200 mm (8 inch)

数据手册与资源

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