IDL04G65C5XUMA2 vs IGLT65R035D2ATMA1 Vergleich

Detaillierter Direktvergleich von IDL04G65C5XUMA2 von Infineon und IGLT65R035D2ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IDL04G65C5XUMA2 IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 ✓ Aktiv

Spezifikationsvergleich

Parameter IDL04G65C5XUMA2 IGLT65R035D2ATMA1
Marke Infineon Infineon
Kategorie Diodes MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,92 $5,10
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC™ Schottky Diode Generation 5 CoolGaN™ G5 TOLT
Diode Type Silicon Carbide (SiC) Schottky —
Repetitive Peak Reverse Voltage (V_RRM) 650 V —
Continuous Forward Current (I_F(AV)) 4 A —
Total Capacitive Charge (Q_C) 7 nC (typical) —
Forward Voltage (V_F) 1.7 V at 4 A (typical, per datasheet) —
Reverse Leakage Current (I_R) 70 µA at 650 V —
Junction Capacitance (C_J) 130 pF at 1 V, 1 MHz —
Reverse Recovery Time (t_rr) 0 ns (Schottky, no minority-carrier storage) —
Betriebs-Sperrschichttemperatur -55°C to +175°C —
Gehäuse PG-VSON-4 (DPAK real2pin) Surface Mount PG-HDSOP-16-8 (top-side cooled)
Montageart Surface Mount, Tape & Reel Surface Mount
Pin-Anzahl 4 (with exposed thermal pad) —
RoHS / REACH RoHS Compliant (per Infineon product page) —
Transistortyp — N-Channel enhancement-mode GaN HEMT
Drain-Source Voltage (Vdss) — 650 V
Continuous Drain Current (Id) at Tc — 47 A
Maximum Power Dissipation (Pd) at Tc — 154 W
On-Resistance (Rds(on)) — [DATA_NEEDED: typical Rds(on) in mohm]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: typical Vgs(th)]
Input Capacitance (Ciss) at Vds=400V — 540 pF
Betriebstemperaturbereich — [DATA_NEEDED: Tj min/max]
Cooling Configuration — Top-side cooled (TOLT)
MSL-Level — [DATA_NEEDED: MSL rating]
RoHS-Status — Compliant
Lead-Free — Yes
Production Wafer Size — 200 mm (8 inch)

Datenblätter & Ressourcen

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