IGLT65R035D2ATMA1 - 650V 47A CoolGaN™ G5 Transistor | Infineon
MPN: IGLT65R035D2ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $9.28 | $9.28 |
| 10 | $8.45 | $84.50 |
| 100 | $7.2 | $720.00 |
| 500 | $6.05 | $3,025.00 |
| 1,000 | $5.1 | $5,100.00 |
IGLT65R035D2ATMA1 Overview
An enhancement-mode GaN HEMT (high-electron-mobility transistor) is a wide-bandgap power switch whose two-dimensional electron gas (2DEG) channel conducts only when a positive gate voltage is applied. Compared to silicon MOSFETs and IGBTs, GaN transistors offer lower gate charge (Qg), lower output charge (Qoss), zero reverse-recovery charge (Qrr), and switching speeds one to two orders of magnitude faster, enabling smaller magnetics, higher switching frequencies (100 kHz to >1 MHz), and higher system efficiency (>98% in well-designed LLC and totem-pole PFC stages). The CoolGaN™ G5 generation specifically targets industrial and telecom power-supply designs that require both high reliability and compact form factors.
Key features of the IGLT65R035D2ATMA1 include 650 V drain-source blocking voltage, 47 A continuous drain current, 154 W maximum power dissipation, a Kelvin-source pin for low-inductance gate driving, and top-side cooling via a large exposed pad on the upper surface of the HDSOP-16-8 package. The top-cool configuration enables direct attachment to a heatsink or cold plate, removing thermal bottlenecks that constrain bottom-cooled DFN packages in planar layouts.
Architecturally, the device uses a normally-off cascode-free GaN-on-Si HEMT with an integrated gate clamp, enabling robust behaviour during transients and simplified gate-drive requirements. The very low Qg × Rds(on) figure of merit (FOM) translates directly into reduced switching losses at high dV/dt, which is critical for hard-switched and soft-switched topologies such as totem-pole PFC, LLC, and active-clamp flyback converters used in server, telecom, and renewable-energy applications.
Typical applications include 1 kW to 6 kW AC-DC power supplies using totem-pole PFC, high-density server and hyperscaler power-supply units (PSUs), telecom rectifier modules, solar inverters and energy-storage DC-DC stages, and industrial motor drives. The wide Vds rating also makes it suitable for 380-400 V DC-bus systems found in e-mobility charging and industrial automation.
When designing with this part, ensure the gate-drive loop inductance is minimised by routing the gate and Kelvin-source traces as a tightly-coupled differential pair, and place a small ferrite bead or gate resistor (typically 5-15 ohm) close to the gate pin to dampen ringing. The top-side thermal pad should be soldered or thermally-attached to a heatsink; thermal-interface material (TIM) with high conductivity (>5 W/mK) is recommended for best results.
This page synthesises distributor pricing, pin-compatible CoolGaN drop-in alternatives, and practical thermal and gate-drive design notes that are not collated in the manufacturer datasheet alone, helping engineers quickly evaluate the IGLT65R035D2ATMA1 for next-generation high-density power-conversion designs.
Drop-in alternatives for IGLT65R035D2ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IGLT65R035D2ATMA1 (same form factor and footprint) — differing in Package, Product Family, Operating Junction Temperature, Technology, Mounting Type.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IGLT65R035D2
✅ Drop-In📋 Reference alternative (not in catalog)
IGLR70R200D2SXUMA1
✅ Drop-In✓ In Stock
$1.24 / Unit
View Datasheet →IMLT65R040M2HXTMA1
✅ Drop-In✓ In Stock
$4.25 / Unit
View Datasheet →IDL04G65C5XUMA2
✅ Drop-In✓ In Stock
$0.92 / Unit
View Datasheet →BSC076N04NDATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →IAUC120N04S6L015ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IGLT65R035D2ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolGaN™ G5 TOLT |
| Transistor Type | N-Channel enhancement-mode GaN HEMT |
| Drain-Source Voltage (Vdss) | 650 V |
| Continuous Drain Current (Id) at Tc | 47 A |
| Maximum Power Dissipation (Pd) at Tc | 154 W |
| Input Capacitance (Ciss) at Vds=400V | 540 pF |
| Package | PG-HDSOP-16-8 (top-side cooled) |
| Mounting Type | Surface Mount |
| Cooling Configuration | Top-side cooled (TOLT) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Production Wafer Size | 200 mm (8 inch) |
IGLT65R035D2ATMA1 pg-hdsop-16-8 (top-side cooled) Pin Configuration Guide
Pin configuration for IGLT65R035D2ATMA1 (pg-hdsop-16-8 (top-side cooled) package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.
No detailed pinout data available for IGLT65R035D2ATMA1.
Refer to the datasheet for full pin configuration.
Typical Applications
IGLT65R035D2ATMA1 is suitable for 6 applications: Totem-Pole Bridgeless PFC, Server and Hyperscaler PSU, Telecom Rectifier Module, Solar Inverter DC-DC Stage, Industrial Motor Drive, EV On-Board Charger (OBC).
Totem-Pole Bridgeless PFC
The IGLT65R035D2ATMA1 is purpose-built for totem-pole bridgeless PFC stages in 1-3 kW AC-DC power supplies, where its 650 V drain-source rating handles rectified 400 VAC line peaks (up to 565 VDC) with derating margin. The CoolGaN™ G5 enhancement-mode HEMT has zero reverse-recovery charge (Qrr = 0), eliminating the slow-body-diode switching losses that plague silicon MOSFETs in this hard-commutated topology and enabling >99% efficiency per Infineon's reference designs. The 47 A continuous drain current supports full-power operation at 70 kHz-200 kHz switching frequencies, while the PG-HDSOP-16-8 top-side cooled package enables direct attachment to a heatsink, removing thermal bottlenecks. Pair with the Infineon 1ED020I12B2XUMA1 or 2EDL8033G4CXTMA1 isolated gate driver for optimal gate-loop inductance and dv/dt immunity.
Recommended
Server and Hyperscaler PSU
In 800 W to 3 kW server and hyperscaler PSU designs targeting 80 PLUS Titanium efficiency, the IGLT65R035D2ATMA1 enables high-density LLC and PFC topologies that meet stringent efficiency and power-density targets. The GaN transistor's low Qg × Rds(on) figure of merit (FOM) reduces switching losses by 30-50% versus silicon superjunction MOSFETs at 100 kHz+, allowing engineers to shrink magnetics and bulk capacitance. The 47 A drain current and 650 V rating suit 380-400 V intermediate bus architectures, while the top-cooled HDSOP-16-8 package simplifies thermal integration into 1U and CRPS form factors. The device's robust gate structure tolerates standard 0-12 V gate-drive without negative bias, simplifying PSU controller design.
Recommended
Telecom Rectifier Module
Telecom rectifier modules operating from 48 V or -48 V battery plants require high-efficiency front-end PFC and isolated DC-DC stages; the IGLT65R035D2ATMA1 fits the PFC side of these designs. Its 650 V drain-source rating handles universal AC input (90-264 VAC) rectified to 400 VDC, while its high switching frequency capability shrinks the PFC inductor and EMI filter footprint - critical for compact 1U telecom shelves. The CoolGaN™ G5 family is qualified to Infineon's industrial reliability standards (JEDEC-qualified, with H3TRB and HTGB data available in the datasheet), supporting long-life telecom deployments. The top-side cooled PG-HDSOP-16-8 package enables cold-plate attachment in sealed rectifier enclosures.
Recommended
Solar Inverter DC-DC Stage
In string-inverter and microinverter designs, the IGLT65R035D2ATMA1 supports high-frequency DC-DC boost stages converting 30-60 VDC PV panel output to 380-400 VDC intermediate bus for grid-tie inversion. Its 650 V rating and 47 A current handling enable 2-3 kW per-phase inverter stages with high conversion efficiency, maximising energy harvest from PV strings. The GaN HEMT's zero Qrr behaviour eliminates reverse-conduction losses in bidirectional converter topologies, simplifying the inverter topology. The top-side cooled package allows direct mounting to inverter heatsinks or cold plates, supporting IP67-sealed outdoor enclosures common in residential and commercial solar installations.
Recommended
Industrial Motor Drive
Industrial variable-frequency drives (VFDs) and servo amplifiers benefit from the IGLT65R035D2ATMA1's 650 V rating and high switching speed in the inverter output stage. Driving 400 VAC three-phase motors at PWM frequencies of 50-100 kHz, the CoolGaN™ G5 transistor reduces switching losses versus silicon IGBTs by up to 60%, enabling smaller heatsinks, higher torque bandwidth, and reduced audible noise. The 47 A continuous current rating supports drives rated up to ~15 kW when paralleled per phase leg. The robust gate structure tolerates the high dV/dt and motor-cable reflections typical of long-cable motor installations, while the top-cooled PG-HDSOP-16-8 package simplifies thermal integration into sealed industrial enclosures.
Recommended
EV On-Board Charger (OBC)
In 6.6 kW to 22 kW EV on-board chargers, the IGLT65R035D2ATMA1 enables compact totem-pole PFC and CLLC resonant DC-DC stages that meet automotive efficiency and power-density targets. Two paralleled devices per switch position support 11 kW OBC designs, while the 650 V rating handles rectified 400 VAC PFC output. The CoolGaN™ G5 family offers higher reliability than silicon at elevated junction temperatures, with Tj up to 150°C continuous - critical for under-hood automotive environments. The top-side cooled PG-HDSOP-16-8 package allows direct cold-plate attachment in liquid-cooled OBC enclosures, while the Kelvin-source pin minimises gate-loop inductance for clean switching at >100 V/ns dV/dt.
Recommended
Recommended Products Summary
Engineering reference data for IGLT65R035D2ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IGLT65R035D2 | IGLR70R200D2SXUMA1 | IMLT65R040M2HXTMA1 | IDL04G65C5XUMA2 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-HDSOP-16-8 (top-cooled) | PG-HDSOP-16-8 (top-cooled) - same | PG-HDSOP-16-8 - same | PG-HDSOP-16-8 - same | PG-HDSOP-16-8 - same |
| Drain-Source Voltage (Vdss) | 650 V | 650 V | 700 V | 650 V | 650 V (SiC diode) |
| On-Resistance Class (Rds(on)) | 35 mohm-class | 35 mohm-class | 200 mohm-class | 40 mohm-class | N/A |
| Technology Family | CoolGaN™ G5 TOLT | CoolGaN™ G5 TOLT | CoolGaN™ G5 TOLT | CoolGaN™ Gen2 M2 | CoolSiC™ Schottky diode |
| Cooling Configuration | Top-side cooled | Top-side cooled | Top-side cooled | Top-side cooled | Top-side cooled |
Key Differentiators
- Top-side cooled package for direct cold-plate attachment (vs Bottom-cooled DFN GaN devices)
- Zero reverse-recovery charge (Qrr = 0) (vs Silicon superjunction MOSFETs (e.g. IPW60R037P7XKSA1))
- 650 V rating with 35 mohm-class Rds(on) (vs Higher-Rds(on) CoolGaN™ G5 variants (e.g. 200 mohm class))
Design Notes
The PG-HDSOP-16-8 package is top-side cooled (TOLT configuration). Solder the exposed thermal pad on the top surface directly to a heatsink or cold plate with high-conductivity thermal-interface material (>5 W/mK). Estimated: at 100 W total power dissipation per device and a junction-to-case thermal resistance in the ~1 C/W range, the case temperature must be held below 125°C to keep Tj under the 150°C maximum. Use multiple thermal vias in the PCB layers beneath the package's bottom-side pads to provide auxiliary bottom-side heat extraction if needed.
Minimise the gate-drive loop inductance by routing the gate and Kelvin-source traces as a tightly-coupled differential pair directly to the gate-driver IC output. Keep this loop area below 0.5 cm² to suppress ringing at high dV/dt (>100 V/ns). Place a small gate resistor (typically 5-15 ohm) immediately at the gate pin to dampen residual ringing; this resistor also limits peak gate current during fast dv/dt events. The drain and source power-loop inductance should be minimised using wide copper pours and minimal trace length.
Do not drive the gate above the absolute maximum rating of +20 V; the recommended gate-drive is 0 V (off) to +12 V (on) without negative bias. Although the GaN HEMT has zero Qrr, the device body diode does conduct during dead-time - size the dead-time to 50-100 ns in half-bridge configurations to balance efficiency and cross-conduction losses. Avoid probing the gate with long ground-leaded oscilloscope probes, which add inductance and corrupt switching waveforms; use a low-inductance coax-tip probe or the probe-connection pad provided on Infineon's evaluation boards.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified; for automotive applications evaluate Infineon automotive-grade CoolGaN™ parts. Halogen-free per Infineon environmental compliance documentation.
