IGLD60R070D1AUMA3 vs ISC015N06NM5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IGLD60R070D1AUMA3 disebabkan oleh Infineon dan ISC015N06NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IGLD60R070D1AUMA3 ISC015N06NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology GaN HEMT (enhancement-mode, normally-off) Trench MOSFET (OptiMOS 5)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc) 15 A —
Power Dissipation (PD, Tc) 114 W —
On-Resistance (RDS(on)) 70 mΩ (typical, VGS = 10 V) —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Output Charge (Qoss) [DATA_NEEDED: Qoss] —
Reverse Recovery Charge (Qrr) Near zero (GaN technology) —
Input Capacitance (Ciss) 380 pF @ 400 V (per Utmel) —
Kemasan PG-LSON-8-1 (LSON-8 with exposed pad) PG-TDSON-8 (PQFN 5x6) Drain-Down
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 3 —
Boson Bebas Yes —
Status RoHS Compliant Compliant
Operating Temperature (Tj) [DATA_NEEDED: Tj max] —
Series CoolGaN™ —
Polarity N-Channel —
Packaging Tape & Reel —
Factory Pack Quantity 3000 —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA=25C — 33 A
Pulsed Drain Current (IDM) at TC=25C — 259 A
On-Resistance RDS(on) typical at VGS=10V — 1.5 mOhm
Total Power Dissipation (TA) — 3 W
Total Power Dissipation (TC) — 188 W
Gambaran Suhu Operasi — -55 C to +175 C
MSL (Moisture Sensitivity Level) — 1

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