IKD04N60RATMA1 vs IKD10N60RC2ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IKD04N60RATMA1 sa pamamagitan ng Infineon at IKD10N60RC2ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IKD04N60RATMA1 IKD04N60RATMA1 - 600V 8A RC-Drives IGBT w/ Diode | Infineon

IKD04N60RATMA1 - 600V 8A RC-Drives IGBT w/ Diode | Infineon

IKD04N60RATMA1 ✓ Nakahanda
Infineon
IKD10N60RC2ATMA1 IKD10N60RC2ATMA1 - 600V 10A RC2 IGBT w/ Diode | Infineon

IKD10N60RC2ATMA1 - 600V 10A RC2 IGBT w/ Diode | Infineon

IKD10N60RC2ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IKD04N60RATMA1 IKD10N60RC2ATMA1
Brand Infineon Infineon
Kategorya IGBTs IGBTs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series RC-Drives —
Uri ng Transistor IGBT - Trench Field Stop with integrated diode —
Collector-Emitter Voltage (VCES) 600 V —
Continuous Collector Current (IC) at TC=25C 8 A —
Pulsed Collector Current (ICM) [DATA_NEEDED: pulsed collector current] —
Power Dissipation (PD) at TC=25C 75 W —
Gate-Emitter Voltage (VGES) [DATA_NEEDED: gate-emitter voltage rating] —
VCE(sat) at IC=4A, VGE=15V [DATA_NEEDED: VCE(sat) typical at 4A] —
Gate Threshold Voltage (VGE(th)) [DATA_NEEDED: VGE(th)] —
Integrated Anti-Parallel Diode Yes —
Hanay ng Temperature na Operasyon -40C to +150C -40 C to +175 C (junction)
Packhaging PG-TO252-3 (DPAK) PG-TO252-3 (DPAK, surface mount)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (2 leads + tab) —
Configuration Single —
Level ng MSL 1 —
Tindminan RoHS Compliant Compliant
Technology Target Consumer drives / motor control —
Collector-Emitter Voltage (V_CE) — 600 V
Continuous Collector Current (I_C nom) — 10 A
Pulsed Collector Current (I_Cp) — 18.8 A
Maximum Power Dissipation (P_tot) — 79 W
Technology — TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode)
Integrated Diode — Yes - reverse-conducting 2-diode co-packed
Gate-Emitter Voltage (V_GE) — [DATA_NEEDED: recommended V_GE value]
V_CE(sat) at I_C — [DATA_NEEDED: typical V_CE(sat)]
Switching Frequency (typical) — 10 - 30 kHz (hard-switching)
Short-Circuit Withstand Time — [DATA_NEEDED: t_sc rating]
Qualification — Industrial (qualified per Infineon product validation)

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