IMLT40R011M2HXTMA1 - 400V 11mΩ SiC MOSFET CoolSiC G2 | Infineon
MPN: IMLT40R011M2HXTMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $18.5 | $18.50 |
| 10 | $16.85 | $168.50 |
| 100 | $15.2 | $1,520.00 |
| 500 | $13.95 | $6,975.00 |
| 1,000 | $12.8 | $12,800.00 |
IMLT40R011M2HXTMA1 Overview
A silicon-carbide MOSFET (SiC MOSFET) is a wide-bandgap power transistor that switches much faster and tolerates higher voltages, temperatures, and switching frequencies than a conventional silicon MOSFET. SiC MOSFETs sit within the power management IC hierarchy under discrete semiconductors, enabling higher power density and system efficiency in 2- and 3-level topologies where silicon devices would incur excessive switching loss. The IMLT40R011M2H belongs to the Infineon CoolSiC G2 400V discrete family, developed to reduce overall system cost while delivering best-in-class figure-of-merit.
Key features include an 11 mΩ typical RDS(on) at VGS = 18 V, a benchmark gate threshold voltage VGS(th) of 4.5 V, a recommended gate drive range of 0 V to 18 V, a commutation-robust fast body diode with low Qrr, and 100% avalanche-tested ruggedness. The XT interconnection technology delivers best-in-class thermal performance, and the device is qualified for high-frequency switching and synchronous rectification. RDS(on) shows very low dependency on temperature, simplifying paralleling and thermal design.
The device uses Infineon's Gen-2 SiC trench technology, which lowers specific on-resistance and gate charge versus Gen-1. The low Qrr body diode eliminates the need for an anti-parallel silicon diode in many bridge topologies and reduces dead-time loss. The PG-HDSOP-16-8 top-side-cooled package enables direct heat removal through the PCB top layer or an attached heatsink, which is critical for compact high-power-density converters.
Typical applications include AI server switch-mode power supplies (PSU), telecom rectifiers, industrial SMPS, EV onboard chargers, solar inverters, and motor drives. The 400V rating makes it ideal for PFC stages, full-bridge / half-bridge LLC converters, and totem-pole bridgeless PFC front ends where SiC dramatically reduces switching loss compared to silicon superjunction MOSFETs.
When designing with this part, choose a gate driver rated for the 0 V to 18 V drive range (typical recommended VGS(on) = +18 V, VGS(off) = 0 V or -3 V to -5 V for highest noise immunity). Use a Kelvin-source connection if available to suppress source-inductance-driven gate ringing, and place the gate-loop decoupling capacitor as physically close to the gate and source pins as possible.
This page synthesizes distributor pricing, drop-in alternatives, application guidance, and design notes that complement the manufacturer datasheet, giving engineers a faster path from selection to qualified BOM.
Drop-in alternatives for IMLT40R011M2HXTMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IMLT40R011M2HXTMA1 (same form factor and footprint) — differing in Drain-Source Voltage (VDS), Package, Gate Threshold Voltage (VGS(th)), Product Family, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IMLT65R040M2HXTMA1
✅ Drop-In✓ In Stock
$4.25 / Unit
View Datasheet →ISZ056N03LF2SATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.49 / Unit
View Datasheet →IMLT40R011M2HXTMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolSiC MOSFET 400V G2 |
| Transistor Type | N-Channel SiC MOSFET |
| Drain-Source Voltage (VDS) | 400 V |
| Continuous Drain Current (ID, Tc) | 144 A |
| Power Dissipation (PD, Tc) | 429 W |
| On-State Resistance (RDS(on)) | 11 mΩ (typ) |
| Gate Threshold Voltage (VGS(th)) | 4.5 V (benchmark) |
| Recommended Gate Drive Voltage | 0 V to 18 V |
| Technology | Silicon Carbide (SiC) Gen-2 |
| Body Diode | Commutation-robust fast body diode, low Qrr |
| Avalanche Rating | 100% avalanche tested |
| Package | PG-HDSOP-16-8 (surface mount, top-side cooled) |
| Mounting Type | Surface Mount |
| Interconnection Technology | XT (best-in-class thermal performance) |
| Operating Mode | Enhancement mode |
| Target Topologies | 2- and 3-level hard- and soft-switching |
| Target Applications | AI server PSU, SMPS, motor drives |
| RoHS Status | Compliant |
IMLT40R011M2HXTMA1 Pin Configuration
| Pin 1 | Gate — Gate input for the SiC MOSFET (drive 0-18V) |
| Pin 2-8 | Source — Source pads - low-side connection for power return |
| Pin 9-16 | Source — Source pads - low-side connection for power return |
| Pin EP | Drain — Exposed pad is the drain; top-side cooled via XT interconnect (mechanical drawing in datasheet) |
Safe Operating Area (DC, Tj = 25°C)
Typical Applications
IMLT40R011M2HXTMA1 is suitable for 7 applications: AI Server Switch-Mode Power Supply (PSU), Telecom Rectifier and 48V Bus Converter, EV On-Board Charger (OBC) PFC Stage, Solar String Inverter DC-DC Stage, Industrial Motor Drive and Servo Amplifier, Three-Level T-Type or NPC PFC, Synchronous Rectification in 400V Bus LLC.
AI Server Switch-Mode Power Supply (PSU)
The IMLT40R011M2HXTMA1 is purpose-built by Infineon for AI server PSU 3-12 kW designs targeting 80 PLUS Titanium and Ruby efficiency. Its 400V VDS rating, 11 mΩ RDS(on), and 144 A continuous drain current (Tc) are ideally matched to the boost PFC and primary-side full-bridge stages that dominate these topologies. Compared to silicon superjunction MOSFETs, the Gen-2 SiC die cuts switching loss by roughly 50-70% at 65 kHz, enabling higher switching frequency and smaller magnetics. The low Qrr body diode further reduces dead-time loss in totem-pole bridgeless PFC, where the SiC MOSFET commutates directly without an external anti-parallel silicon diode.
Recommended
Telecom Rectifier and 48V Bus Converter
The IMLT40R011M2HXTMA1 suits the 380V DC intermediate bus in telecom rectifier and 48V-holdup converter designs. At 400V VDS with avalanche-tested ruggedness, the part handles reflected voltage transients from the LLC transformer with comfortable margin. The PG-HDSOP-16-8 top-side cooled package simplifies thermal design in 1U rectifier form factors, where bottom-cooled parts struggle to dissipate heat into the chassis. The 11 mΩ RDS(on) keeps full-load conduction loss low enough to meet 96%+ efficiency requirements, and the Gen-2 SiC die reduces turn-on loss in the primary-side full bridge by 40-60% versus silicon SJ MOSFETs at the same frequency.
Recommended
EV On-Board Charger (OBC) PFC Stage
The IMLT40R011M2HXTMA1 is well suited to the PFC boost stage of a 6.6 kW to 22 kW EV on-board charger. The 400V VDS class fits directly into the rectified 400V bus from the mains, while the 144A continuous drain current supports the 32A peak of a single-phase 7 kW bridgeless totem-pole PFC. The commutation-robust fast body diode and low Qrr are critical for hard-switched totem-pole operation, where silicon body diode recovery would otherwise dictate derating or external anti-parallel diodes. The top-side cooled HDSOP-16-8 package also helps in space-constrained automotive power modules where the heatsink is mounted above the PCB.
Recommended
Solar String Inverter DC-DC Stage
The IMLT40R011M2HXTMA1 fits the boost and DC-DC stages of residential and small-commercial string inverters, where the input bus is typically 400V from a series string of solar panels. Its 400V VDS rating is sized for the open-circuit voltage of a 1500V-class string after the MPPT operating window, and the 11 mΩ RDS(on) minimises conduction loss during high-power extraction. The Gen-2 SiC technology also enables higher switching frequencies (100 kHz+), shrinking the boost inductor and improving MPPT dynamic response to fast irradiance changes. The 100% avalanche-tested rating and 4.5V benchmark VGS(th) give designers extra margin in outdoor, surge-prone installations.
Recommended
Industrial Motor Drive and Servo Amplifier
The IMLT40R011M2HXTMA1 can replace silicon IGBTs in industrial low-voltage motor drives operating on a 400V DC bus. The 11 mΩ RDS(on) and 144A current rating cover servo amplifiers up to 15 kW, and the SiC switching characteristics reduce motor-current ripple, audible noise, and torque ripple by allowing 2-3x higher PWM frequencies. The fast body diode with low Qrr is essential for the reverse-current path during motor regeneration back into the bus, eliminating the need for separate anti-parallel diodes that silicon IGBTs typically require. The PG-HDSOP-16-8 top-side cooled package is also well suited to motor-drive PCBs that mount to a chassis heatsink from above.
Recommended
Three-Level T-Type or NPC PFC
The IMLT40R011M2HXTMA1 is an excellent switch for the 400V outer switches of a three-level T-type or Vienna rectifier PFC, where 800V-class devices are typically used and efficiency is lost. Operating the IMLT40R011M2H at half the bus voltage halves the switching loss per transition and halves the required blocking voltage, enabling 65 kHz+ switching frequency in 5-10 kW three-level PFC stages. The 4.5V benchmark VGS(th) makes it compatible with standard 0/18V gate drive, and the XT interconnect keeps the junction cool under hard-switched 400V transitions. This topology is increasingly common in EV ultra-fast chargers and high-power-density industrial SMPS.
Recommended
Synchronous Rectification in 400V Bus LLC
The IMLT40R011M2HXTMA1 can serve as the secondary-side synchronous rectifier in a 400V bus LLC converter, replacing Schottky diode bridges. The 11 mΩ RDS(on) at 144A continuous delivers conduction loss roughly 5-10x lower than the best 400V Schottky diodes, and the fast body diode simplifies the dead-time optimisation. The PG-HDSOP-16-8 top-side cooled package also enables a flat, low-inductance secondary-side layout that is critical at 200 kHz+ switching frequencies. Infineon recommends this part specifically for high-frequency switching and synchronous rectification in their CoolSiC G2 400V family collateral.
Recommended
Recommended Products Summary
Engineering reference data for IMLT40R011M2HXTMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IMT40R011M2HXTMA1 | IMLT65R040M2HXTMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|---|---|
| Package | PG-HDSOP-16-8 (top-side cooled) | PG-HSOF-8-2 (bottom-cooled) | PG-HDSOP-16-8 (top-side cooled) - same | PG-HDSOP-16-8 - same |
| Brand | Infineon | Infineon | Infineon | Infineon |
| Technology | 400V SiC MOSFET Gen-2 | 400V SiC MOSFET Gen-2 | 650V SiC MOSFET Gen-2 | 30V Silicon N-channel MOSFET |
| Drain-Source Voltage (VDS) | 400 V | 400 V | 650 V | 30 V |
| On-State Resistance (RDS(on)) | 11 mΩ (typ) | 11 mΩ (typ) | 40 mΩ (typ) - 3.6x higher | 5.6 mΩ (typ) - silicon, low-voltage |
| Cooling Method | Top-side cooled (XT interconnect) | Bottom-cooled (HSOF-8-2) | Top-side cooled (same) | Bottom-cooled (same HDSOP family) |
| Pin-to-Pin Compatible Footprint | PG-HDSOP-16-8 | No - different HSOF-8-2 package | Yes - same HDSOP-16-8 footprint | Yes - same HDSOP-16-8 footprint |
Key Differentiators
- Top-side cooled PG-HDSOP-16-8 with XT interconnect (vs IMT40R011M2HXTMA1)
- 11 mΩ Gen-2 SiC at 400V class - best-in-class figure of merit (vs IMLT65R040M2HXTMA1)
- 100% avalanche tested and benchmark 4.5V VGS(th) (vs ISZ056N03LF2SATMA1)
Design Notes
The PG-HDSOP-16-8 package is top-side cooled via Infineon's XT interconnect technology, meaning the drain heat flows up through the package to a top-mounted heatsink rather than down through thermal vias. Designers should mount a flat-surface heatsink directly on top of the package, apply a 25-50 µm thermal interface material (TIM), and clamp with 4-8 in-lb of force. Estimated: at full 144A load with 400V/100V (typical LLC bus), conduction loss alone is roughly P = I² × R = 144² × 0.011 = 228 W, so substantial top-side heatsinking is mandatory. A thin thermal pad (Bergquist GP1500 or equivalent) is preferred over thermal grease to avoid pump-out during thermal cycling.
Place the gate-loop decoupling capacitor (typically 1-10 nF X7R) within 3 mm of the gate and source pins to suppress the source-inductance-driven gate-overshoot that SiC devices are particularly sensitive to. Use a Kelvin-source connection (separate source-sense and power-source pins) when the package offers it; this is one of the key advantages of the HDSOP family over older TO-247 designs. Keep the high-dV/dt loop area (drain-source-power loop) minimal to limit EMI - typically a 4-layer PCB with 2 oz copper on the top drain plane and a full ground plane on layer 2 is recommended.
Do not drive the IMLT40R011M2HXTMA1 with a standard silicon MOSFET gate driver that swings 0V to +12V. The recommended drive is +18V on and 0V (or -3V to -5V) off to fully enhance the SiC channel and minimise RDS(on); undersaturated drive at +12V will leave the device partially on and dramatically increase conduction loss. Also, do not connect the source-sense pin directly to the power source at the PCB edge - it must connect at the package pin to avoid adding 1-5 nH of bond-wire inductance that will oscillate the gate during fast switching transients. Finally, always use an isolated gate driver (1EDN7116G or similar) because the SiC drain can switch at >50 kV/µs and will inject severe common-mode transients into a non-isolated driver supply.
Compliance Information
RoHS compliant and lead-free per Infineon product page. No AEC-Q100 qualification - for automotive OBC, verify the -Q1 automotive variant or use a qualified part number; this specific suffix is industrial grade.
