IPA60R180P7SXKSA1 vs IPL60R105P7AUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPA60R180P7SXKSA1 sa pamamagitan ng Infineon at IPL60R105P7AUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPA60R180P7SXKSA1 IPA60R180P7SXKSA1 - 600V CoolMOS P7 180mOhm MOSFET | Infineon

IPA60R180P7SXKSA1 - 600V CoolMOS P7 180mOhm MOSFET | Infineon

IPA60R180P7SXKSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPA60R180P7SXKSA1 IPL60R105P7AUMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 CoolMOS P7
Technology Superjunction (SJ) N-channel MOSFET Superjunction (SJ) N-Channel Power MOSFET
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID) at Tc 18 A 33 A
Static Drain-Source On-Resistance (RDS(on)) 180 mOhm (max at 25C) —
Power Dissipation (PD) at Tc 26 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Packhaging PG-TO220-3-312 (Through-Hole, 3 leads) PG-VSON-4 (4-pin SMD with exposed pad)
Uri ng Pagpapasok Through Hole Surface Mount
Hanay ng Temperature na Operasyon -55C to +150C (junction) -55C to +150C
Channel Type N-Channel N-Channel
Configuration Single —
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
On-Resistance (RDS(on)) max — 105 mΩ
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (Ptot) at Tc — 137 W
Gate Threshold Voltage (VGS(th)) typ — 3.5 V
Gate Charge (Qg) typ — 45 nC
Level ng MSL — [DATA_NEEDED: MSL rating]
Wala sa Halogen — Yes

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