IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon
MPN: IPB020N08N5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.4 | $2.40 |
| 10 | $2.16 | $21.60 |
| 100 | $1.92 | $192.00 |
| 500 | $1.66 | $830.00 |
| 1,000 | $1.45 | $1,450.00 |
Drop-in alternatives for IPB020N08N5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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✅ Drop-In📋 Reference alternative (not in catalog)
IPB020N08N5ATMA1 Maximum Ratings & Electrical Characteristics
| Technology | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) at Tc=25C | 120 A |
| Pulsed Drain Current (IDM) | 480 A |
| Maximum RDS(on) at VGS=10V | 2.0 mOhm |
| Gate-Source Voltage (VGS) max | +/- 20 V |
| Power Dissipation (PD) at Tc=25C | 300 W |
| Operating Junction Temperature | -55C to +175C |
| Package | PG-TO263-3 (D2PAK-2) |
| Mounting Type | Surface Mount |
| Configuration | Single N-channel, 3-pin (2+Tab) |
| RoHS Status | Compliant |
IPB020N08N5ATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input; standard MOSFET gate terminal |
| Pin 2 | Drain — Drain terminal; internally connected to the metal tab on the bottom of the package |
| Pin 3 | Source — Source terminal; return path for drain current |
| Pin TAB | Drain (Tab) — Exposed metal tab on package bottom - electrically the Drain, must be soldered to PCB thermal pad for heat dissipation |
Safe Operating Area (SOA) - IPB020N08N5ATMA1
Typical Applications
IPB020N08N5ATMA1 is suitable for 6 applications: 48V Telecom Synchronous Rectification, Server and Datacenter 12V/48V VRM Stages, Industrial Motor Control Drives, Solar Inverter DC-DC Boost Stages, Battery Management and Hot-Swap OR-ing, High-Current LED Lighting Drivers.
48V Telecom Synchronous Rectification
The IPB020N08N5ATMA1's 2.0 mOhm RDS(on) and 120 A continuous drain current make it ideal for the secondary-side synchronous rectifier MOSFET in 48 V telecom isolated DC-DC converters (e.g., quarter-brick or eighth-brick modules). At 60 A rectified current, the part dissipates roughly 7.2 W versus 18 W for a 5 mOhm predecessor, improving efficiency by 1-2 percentage points. The 80 V VDS rating provides comfortable margin above the 48V nominal bus with transient spikes to 60 V. The D2PAK-3 package enables top-side cooling via the exposed drain tab, simplifying thermal management in densely populated bricks. Designers should pair the device with a UCC24612 or similar synchronous rectifier controller and minimize the high-current loop inductance for best switching performance.
Recommended
Server and Datacenter 12V/48V VRM Stages
In server power delivery - from 48 V to 12 V intermediate bus converters to multi-phase 12 V VRMs - the IPB020N08N5ATMA1 shines as a high-current synchronous buck switch. Its 2.0 mOhm RDS(on) at VGS=10 V minimizes conduction loss at the 60-100 A phase currents typical in 48-to-12 V conversion stages, while the OptiMOS 5 cell geometry delivers low Qg for sub-100 ns switching transitions. The 80 V rating accommodates 48 V bus transients with substantial margin. The D2PAK-3 footprint offers thermal headroom when mounted on 2 oz copper with thermal vias, sustaining continuous currents above 50 A without exceeding 100C junction temperature. Designers can pair the device with digital controller ISL68137 or analog PWM controllers for closed-loop regulation.
Recommended
Industrial Motor Control Drives
The IPB020N08N5ATMA1 is well-suited for industrial BLDC and PMSM motor drives operating from 24-72 V DC bus rails. The 80 V rating handles 48 V nominal bus with substantial transient margin, while 120 A continuous drain current supports motor power levels up to approximately 4-5 kW per phase leg when paired with appropriate gate drivers. The OptiMOS 5 technology's low Qrr minimizes dead-time losses in the high-side/low-side switching leg, improving inverter efficiency by 0.5-1.0% versus older MOSFET generations. The D2PAK package's exposed tab enables direct PCB heatsink attachment or chassis-mount cooling for high-ambient industrial environments. Design tip: use isolated gate drivers like UCC21540 to switch the high-side safely up to 80 V bus.
Recommended
Solar Inverter DC-DC Boost Stages
In solar micro-inverters and string inverters, the IPB020N08N5ATMA1 serves as the main switching MOSFET in the boost PFC or DC-DC converter stage powered from the PV panel. Its 80 V rating covers open-circuit panel voltages up to approximately 60 V (24 V nominal systems) with 25% derating margin, while the 2.0 mOhm RDS(on) maximizes conversion efficiency across the wide load range of MPPT operation. The avalanche-rated design absorbs the energy from reverse-recovery and inductive kickback events inherent to boost topology. The 300 W power dissipation rating and D2PAK thermal performance support continuous operation at full panel power without external heatsinking in many designs, though a thermal interface to the inverter chassis is recommended for outdoor deployment.
Recommended
Battery Management and Hot-Swap OR-ing
The IPB020N08N5ATMA1 excels in 48 V battery management and OR-ing applications for redundant power systems in datacenter and telecom equipment. As an OR-ing MOSFET, its low 2.0 mOhm RDS(on) minimizes voltage drop and power dissipation across the redundant supply path - at 50 A load the drop is only 100 mV and dissipation 5 W, far better than diode-OR solutions. The 80 V rating handles 48 V battery systems with full transient margin. The D2PAK-3 footprint and 300 W dissipation rating support continuous high-current operation when properly heatsunk. For hot-swap controllers, pair the device with LM5069 or similar hot-swap ICs that manage inrush current and provide fault protection. The avalanche rating also suits battery disconnect switch applications.
Recommended
High-Current LED Lighting Drivers
For high-power LED lighting drivers in commercial and industrial applications (stage lighting, horticultural lighting, high-bay fixtures), the IPB020N08N5ATMA1 serves as the main switching element in constant-current buck or boost LED drivers. Its 2.0 mOhm RDS(on) at 80 V supports 48 V LED string architectures with currents up to several amps per string, minimizing thermal stress on the switching element and improving driver efficiency above 95%. The wide SOA and OptiMOS 5 ruggedness enable reliable operation in PWM-dimmed LED strings where high dV/dt stresses the MOSFET repeatedly. The D2PAK package allows for compact driver designs with adequate thermal performance. For LED driver, the part is often paired with PFC + LLC combo controllers for high-power lighting installations.
Recommended
Recommended Products Summary
Engineering reference data for IPB020N08N5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB031N08N5ATMA1 | IPT015N10NF2SATMA1 | IPB021N10NM5LF2ATMA1 | IPB081N06L3GATMA1 | BSC028N06NSTATMA1 | NTMFS5C430NL |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | D2PAK-equivalent (SO-8FL) - verify |
| Drain-Source Voltage (VDS) | 80 V | 80 V - same | 100 V (+25%) | 100 V (+25%) | 60 V (-25%) | 60 V (-25%) | 80 V - same |
| Maximum RDS(on) at VGS=10V | 2.0 mOhm | 3.1 mOhm (+55%) | 1.5 mOhm (-25%) | 2.1 mOhm (+5%) | 8.1 mOhm (+305%) | 2.8 mOhm (+40%) | Approximately 2.5 mOhm (verify per datasheet) |
| Continuous Drain Current (ID) at Tc=25C | 120 A | Approximately 100 A (verify per datasheet) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | OptiMOS 5 (80V) | OptiMOS 5 (80V) | OptiMOS 5 (100V) | OptiMOS 5 (100V) | OptiMOS 3 (60V) | OptiMOS (60V) | onsemi process generation |
| Gate Threshold Type | Standard (10V VGS) | Standard (10V VGS) | Standard (10V VGS) | Standard (10V VGS) | Logic-level | Standard (10V VGS) | Standard (verify) |
| Power Dissipation (PD) at Tc=25C | 300 W | Approximately 250 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Operating Junction Temperature | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C (typical for this class) |
Key Differentiators
- Lowest RDS(on) in 80V OptiMOS 5 D2PAK family (vs IPB031N08N5ATMA1)
- Lower RDS(on) at the same voltage class than typical competitors (vs NTMFS5C430NL (onsemi))
- 43% RDS(on) reduction vs previous generation OptiMOS (vs Previous-gen OptiMOS 80V parts)
- Wide 80V VDS rating provides transient margin above 48V bus (vs 60V-class alternatives (IPB081N06L3G, BSC028N06NS))
Design Notes
Estimated: at ID=50A continuous in a buck converter with VDS=48V nominal switching transients, the IPB020N08N5ATMA1 dissipates P = I^2 x RDS(on) = 50^2 x 0.002 = 5.0W average conduction loss, plus switching loss proportional to frequency. With RthJC approximately 0.5 C/W, the junction-to-case temperature rise is 5.0 x 0.5 = 2.5C. To maintain Tj below 125C, the case must be kept below approximately 122C, requiring the D2PAK exposed tab to be soldered to at least 1 square inch of 2 oz copper with thermal vias to inner planes. Without sufficient PCB copper, the device will derate significantly at high current.
Lay out the gate-drive loop (gate driver output -> gate resistor -> MOSFET gate -> source -> back to driver ground) as a tight, narrow loop with minimal area to reduce parasitic inductance. Use a gate resistor in the 2-10 ohm range to control ringing and limit peak gate current. Place the input bypass capacitor as close as possible between drain and source to minimize the high-current switching loop inductance. The exposed drain tab should be soldered to a large copper pad with multiple thermal vias (typically 9-16 vias of 0.3mm diameter) to inner-layer ground/power planes for optimal heat extraction.
Do not exceed VGS of +/-20V even briefly - the gate oxide is thin and ESD-sensitive. Use a gate-source pull-down resistor (10-100 kOhm) to prevent accidental turn-on from dV/dt-induced Miller coupling during the high-side turn-on transition. The D2PAK drain tab floats until soldered; handle with care during board assembly to avoid ESD damage. Verify peak drain current at startup inrush does not exceed the pulsed drain current rating (480A per datasheet) - add soft-start circuitry if necessary. Finally, derate VDS by at least 20% for unclamped inductive switching events to stay within avalanche ratings.
For high-frequency switching (>100 kHz), use a 4-layer PCB with dedicated ground and power planes. Keep the switching node (drain of low-side / source of high-side) physically small and surrounded by ground copper to minimize EMI radiation. Place the gate driver within 5mm of the MOSFET gate pin to limit parasitic gate-loop inductance. For synchronous rectification, parallel devices benefit from matched gate resistors and symmetric PCB layout to ensure current sharing. Use Kelvin-source connection for the gate driver return path when sourcing high peak gate currents.
Compliance Information
RoHS compliant per Infineon product page. Halogen-free per package datasheet. Not AEC-Q100 qualified - use IPP60R190C6 or AEC-Q100 grade variants for automotive. Conflict-minerals declaration available from Infineon.
