IPB037N06N3GATMA1 vs BSC050N04LSGATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPB037N06N3GATMA1 tarafından Infineon ve BSC050N04LSGATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IPB037N06N3GATMA1 - 60V 90A 3.7mOhm OptiMOS 3 N-MOSFET D2PAK | Infineon
IPB037N06N3GATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IPB037N06N3GATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPB037N06N3GATMA1 | — |
| Technology | OptiMOS 3 (N-channel, enhancement mode) | OptiMOS 3 (trench MOSFET) |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 60 V | — |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current IDM] |
| On-Resistance RDS(on) Max | 3.7 mOhm at VGS=10V | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Power Dissipation (Pd) at Tc | 188 W | — |
| İşletim Sıcaklığı Aralığı | -55 C to +175 C (junction) | -55C to +150C |
| Paket / Kas | PG-TO263-3 (D2PAK, surface mount) | — |
| Montaj Türü | Surface Mount | Surface Mount |
| Gate Charge (Qg) Typ | [DATA_NEEDED: gate charge value] | — |
| RoHS Durumu | Compliant | Compliant |
| MSL Seviyesi | 1 (unlimited) | 1 |
| Drain Tab Connection | Tab electrically tied to drain | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Paket | — | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |