IPB037N06N3GATMA1 vs BSC050N04LSGATMA1 比較
詳細並排比較 IPB037N06N3GATMA1 由 Infineon 與 BSC050N04LSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPB037N06N3GATMA1 - 60V 90A 3.7mOhm OptiMOS 3 N-MOSFET D2PAK | Infineon
IPB037N06N3GATMA1 ✓ 啟用中
規格比較
| 參數 | IPB037N06N3GATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPB037N06N3GATMA1 | — |
| Technology | OptiMOS 3 (N-channel, enhancement mode) | OptiMOS 3 (trench MOSFET) |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 60 V | — |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current IDM] |
| On-Resistance RDS(on) Max | 3.7 mOhm at VGS=10V | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Power Dissipation (Pd) at Tc | 188 W | — |
| 工作溫度範圍 | -55 C to +175 C (junction) | -55C to +150C |
| 封裝 / 外殼 | PG-TO263-3 (D2PAK, surface mount) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Gate Charge (Qg) Typ | [DATA_NEEDED: gate charge value] | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (unlimited) | 1 |
| Drain Tab Connection | Tab electrically tied to drain | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| 封裝 | — | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |