IPB039N10N3GATMA1 vs IPB110P06LMATMA1 Comparison

Detailed side-by-side comparison of IPB039N10N3GATMA1 by Infineon and IPB110P06LMATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPB110P06LMATMA1 IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 βœ“ Active

Specification Comparison

Parameter IPB039N10N3GATMA1 IPB110P06LMATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.28 $1.31
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide) OptiMOS (trench MOSFET)
Drain-to-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at TC=25C 160 A -100 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Power Dissipation (PD) at TC=25C 214 W β€”
On-State Resistance RDS(on) at VGS=10V (typ) 3.9 mOhm β€”
Gate-Source Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] β€”
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd typ] β€”
Operating Temperature Range -55C to +175C -55 C to +175 C (TJ)
Package PG-TO263-7 (D2PAK-7, 6 leads + tab) β€”
Mounting Type Surface Mount Surface Mount
MSL Level 1 β€”
RoHS / Halogen-Free Status RoHS compliant, halogen-free β€”
Series / Family OptiMOS 3 β€”
Drain-Source Voltage (VDS) β€” -60 V
Maximum Power Dissipation (PD) at TC=25C β€” 300 W
On-State Resistance (RDS(on) max) at VGS=10V β€” 11 mOhm @ ID=100A
Gate Threshold Voltage (VGS(th) max) β€” 2 V @ ID=5.55 mA
Gate-Source Voltage (VGS max) β€” +/-20 V
Package / Case β€” PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab)
Supplier Device Package β€” PG-TO263-3-2
Gate Drive Level β€” Logic-level compatible
RoHS Status β€” Compliant
Lead-Free β€” Yes

Datasheets & Resources

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