IPB039N10N3GATMA1 vs IPB110P06LMATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB039N10N3GATMA1 disebabkan oleh Infineon dan IPB110P06LMATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPB039N10N3GATMA1 - 100V 160A OptiMOS 3 N-Channel MOSFET | Infineon
IPB039N10N3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPB039N10N3GATMA1 | IPB110P06LMATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS (trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 160 A | -100 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at TC=25C | 214 W | — |
| On-State Resistance RDS(on) at VGS=10V (typ) | 3.9 mOhm | — |
| Gate-Source Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd typ] | — |
| Gambaran Suhu Operasi | -55C to +175C | -55 C to +175 C (TJ) |
| Kemasan | PG-TO263-7 (D2PAK-7, 6 leads + tab) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 | — |
| RoHS / Halogen-Free Status | RoHS compliant, halogen-free | — |
| Series / Family | OptiMOS 3 | — |
| Drain-Source Voltage (VDS) | — | -60 V |
| Maximum Power Dissipation (PD) at TC=25C | — | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | — | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | — | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | — | +/-20 V |
| Kemasan / Case | — | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | — | PG-TO263-3-2 |
| Gate Drive Level | — | Logic-level compatible |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |