IPB039N10N3GATMA1 vs IPB110P06LMATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB039N10N3GATMA1 sa pamamagitan ng Infineon at IPB110P06LMATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPB110P06LMATMA1 IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPB039N10N3GATMA1 IPB110P06LMATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide) OptiMOS (trench MOSFET)
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 160 A -100 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at TC=25C 214 W —
On-State Resistance RDS(on) at VGS=10V (typ) 3.9 mOhm —
Gate-Source Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd typ] —
Hanay ng Temperature na Operasyon -55C to +175C -55 C to +175 C (TJ)
Packhaging PG-TO263-7 (D2PAK-7, 6 leads + tab) —
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 —
RoHS / Halogen-Free Status RoHS compliant, halogen-free —
Series / Family OptiMOS 3 —
Drain-Source Voltage (VDS) — -60 V
Maximum Power Dissipation (PD) at TC=25C — 300 W
On-State Resistance (RDS(on) max) at VGS=10V — 11 mOhm @ ID=100A
Gate Threshold Voltage (VGS(th) max) — 2 V @ ID=5.55 mA
Gate-Source Voltage (VGS max) — +/-20 V
Packhaging / Kaso — PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab)
Supplier Device Package — PG-TO263-3-2
Gate Drive Level — Logic-level compatible
Tindminan RoHS — Compliant
Lead-Free — Yes

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