IPB073N15N5ATMA1 vs IPB110P06LMATMA1 Comparison
Detailed side-by-side comparison of IPB073N15N5ATMA1 by Infineon and IPB110P06LMATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB073N15N5ATMA1 - 150V 114A 7.3mΞ© OptiMOS 5 N-MOSFET | Infineon
IPB073N15N5ATMA1 β ActiveSpecification Comparison
| Parameter | IPB073N15N5ATMA1 | IPB110P06LMATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.82 | $1.31 |
| Technology | OptiMOS 5 (superjunction trench) | OptiMOS (trench MOSFET) |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 150 V | -60 V |
| Continuous Drain Current (ID) at Tc=25Β°C | 114 A | β |
| On-Resistance RDS(on) max at VGS=10V | 7.3 mΞ© | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Power Dissition (PD) at Tc=25Β°C | 214 W | β |
| Package | PG-TO263-3-2 (D2PAK-3L, surface mount) | β |
| Mounting Type | Surface Mount (SMD) | Surface Mount |
| Packaging | Tape and Reel (suffix ATMA1) | β |
| Operating Temperature Range | -55Β°C to +175Β°C (junction) | -55 C to +175 C (TJ) |
| Configuration | Single N-channel, 3 pins (Gate, Drain, Source) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL (Moisture Sensitivity Level) | [DATA_NEEDED: MSL level] | β |
| FET Type | β | P-Channel |
| Continuous Drain Current (ID) at TC=25C | β | -100 A |
| Maximum Power Dissipation (PD) at TC=25C | β | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | β | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | β | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | β | +/-20 V |
| Package / Case | β | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | β | PG-TO263-3-2 |
| Gate Drive Level | β | Logic-level compatible |