IPB073N15N5ATMA1 vs IPB110P06LMATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB073N15N5ATMA1 sa pamamagitan ng Infineon at IPB110P06LMATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPB110P06LMATMA1 IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPB073N15N5ATMA1 IPB110P06LMATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Technology OptiMOS 5 (superjunction trench) OptiMOS (trench MOSFET)
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 150 V -60 V
Continuous Drain Current (ID) at Tc=25°C 114 A —
On-Resistance RDS(on) max at VGS=10V 7.3 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Power Dissition (PD) at Tc=25°C 214 W —
Packhaging PG-TO263-3-2 (D2PAK-3L, surface mount) —
Uri ng Pagpapasok Surface Mount (SMD) Surface Mount
Packaging Tape and Reel (suffix ATMA1) —
Hanay ng Temperature na Operasyon -55°C to +175°C (junction) -55 C to +175 C (TJ)
Configuration Single N-channel, 3 pins (Gate, Drain, Source) —
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
MSL (Moisture Sensitivity Level) [DATA_NEEDED: MSL level] —
FET Type — P-Channel
Continuous Drain Current (ID) at TC=25C — -100 A
Maximum Power Dissipation (PD) at TC=25C — 300 W
On-State Resistance (RDS(on) max) at VGS=10V — 11 mOhm @ ID=100A
Gate Threshold Voltage (VGS(th) max) — 2 V @ ID=5.55 mA
Gate-Source Voltage (VGS max) — +/-20 V
Packhaging / Kaso — PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab)
Supplier Device Package — PG-TO263-3-2
Gate Drive Level — Logic-level compatible

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