IPD028N06NF2SATMA1 vs IPD50N06S409ATMA2 Perbandingan

Perbandingan bersamaan detil IPD028N06NF2SATMA1 dari Infineon dan IPD50N06S409ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD028N06NF2SATMA1 IPD50N06S409ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPD028N06NF2SATMA1 —
Tipe Transistor N-Channel MOSFET —
Technology Family OptiMOS 5 60V —
Drain-Source Voltage (VDS) max 60 V —
Continuous Drain Current (ID) at TA=25°C 24 A —
Continuous Drain Current (ID) at TC=25°C 139 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) typ @ VGS=10V 2.85 mΩ —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typ] —
Power Dissipation at TA=25°C 3 W —
Power Dissipation at TC=25°C 150 W —
Rentang Suhu Hubung Kerja -55 C to +175 C —
Paket PG-TO252-3 (DPAK) PG-TO252-3-11 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate, Drain-tab, Source) 3 (2 + Tab)
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020) —
Packing Tape & Reel (T&R) —
Technology — N-Channel MOSFET (OptiMOS)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc — 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V — 9 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc — 71 W
Suhu Hubung Kerja — -55 °C to +175 °C
Automotive Qualification — AEC-Q101
Lead-Free / Halogen-Free — [DATA_NEEDED]

Spek dan Sumber

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