IPD028N06NF2SATMA1 vs IPD50N06S409ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD028N06NF2SATMA1 disebabkan oleh Infineon dan IPD50N06S409ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD028N06NF2SATMA1 IPD50N06S409ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPD028N06NF2SATMA1 —
Jenis Transistor N-Channel MOSFET —
Technology Family OptiMOS 5 60V —
Drain-Source Voltage (VDS) max 60 V —
Continuous Drain Current (ID) at TA=25°C 24 A —
Continuous Drain Current (ID) at TC=25°C 139 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) typ @ VGS=10V 2.85 mΩ —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typ] —
Power Dissipation at TA=25°C 3 W —
Power Dissipation at TC=25°C 150 W —
Gambaran Suhu Hubungan Operasi -55 C to +175 C —
Kemasan PG-TO252-3 (DPAK) PG-TO252-3-11 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate, Drain-tab, Source) 3 (2 + Tab)
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020) —
Packing Tape & Reel (T&R) —
Technology — N-Channel MOSFET (OptiMOS)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc — 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V — 9 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc — 71 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Automotive Qualification — AEC-Q101
Lead-Free / Halogen-Free — [DATA_NEEDED]

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