IPD031N06L3GATMA1 vs BSC027N04LSGATMA1 Comparison

Detailed side-by-side comparison of IPD031N06L3GATMA1 by Infineon and BSC027N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC027N04LSGATMA1

BSC027N04LSGATMA1 - 40V 100A 2.7mΩ OptiMOS 3 N-MOSFET | Infineon

BSC027N04LSGATMA1 ✓ Active

Specification Comparison

Parameter IPD031N06L3GATMA1 BSC027N04LSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.54
FET Type N-Channel
Technology MOSFET (Metal Oxide) OptiMOS 3 (Trench)
Drain-to-Source Voltage (VDS) 60 V
Continuous Drain Current (ID) at TC=25°C 100 A
Pulsed Drain Current (IDM) 400 A [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD) at TC=25°C 167 W
RDS(on) Max at VGS=10V 3.1 mΩ
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V
Gate Drive Voltage (Max RDS(on)) 4.5 V, 10 V
Total Gate Charge (Qg) Typ [DATA_NEEDED: Qg typical value]
Operating Temperature Range -55°C to +175°C -55°C to +150°C
Package PG-TO252-3 (DPAK) PG-TDSON-8-1 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Series OptiMOS 3
MSL Level 1 (Unlimited) 1
RoHS Status Compliant Compliant
Manufacturer Infineon Technologies
Product Family OptiMOS 3
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 40 V
Gate-Source Voltage (VGS) max ±20 V
Continuous Drain Current (ID) at Ta=25°C 24 A
Continuous Drain Current (ID) at Tc=25°C 100 A
On-Resistance RDS(on) max @ VGS=10V 2.7 mΩ
Power Dissipation (Ta=25°C) 2.5 W
Power Dissipation (Tc=25°C) 83 W
Halogen-Free Yes

Datasheets & Resources

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