IPD031N06L3GATMA1 vs BSC027N04LSGATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD031N06L3GATMA1 sa pamamagitan ng Infineon at BSC027N04LSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IPD031N06L3GATMA1 BSC027N04LSGATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 3 (Trench)
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25°C 100 A —
Pulsed Drain Current (IDM) 400 A [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD) at TC=25°C 167 W —
RDS(on) Max at VGS=10V 3.1 mΩ —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V —
Gate Drive Voltage (Max RDS(on)) 4.5 V, 10 V —
Total Gate Charge (Qg) Typ [DATA_NEEDED: Qg typical value] —
Hanay ng Temperature na Operasyon -55°C to +175°C -55°C to +150°C
Packhaging PG-TO252-3 (DPAK) PG-TDSON-8-1 (SuperSO8 5x6)
Uri ng Pagpapasok Surface Mount Surface Mount
Series OptiMOS 3 —
Level ng MSL 1 (Unlimited) 1
Tindminan RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at Ta=25°C — 24 A
Continuous Drain Current (ID) at Tc=25°C — 100 A
On-Resistance RDS(on) max @ VGS=10V — 2.7 mΩ
Power Dissipation (Ta=25°C) — 2.5 W
Pwersang Pinahihigpit (TC=25°C) — 83 W
Wala sa Halogen — Yes

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