IPD052N10NF2SATMA1 - 100V N-Ch MOSFET 5.2mΩ 118A | Infineon
MPN: IPD052N10NF2SATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.18 | $1.18 |
| 10 | $1.04 | $10.40 |
| 100 | $0.88 | $88.00 |
| 500 | $0.76 | $380.00 |
| 1,000 | $0.65 | $650.00 |
| 3,000 | $0.55 | $1,650.00 |
IPD052N10NF2SATMA1 Overview
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch in which a positive gate-source voltage creates a conductive n-type channel between drain and source. Power MOSFETs are the fundamental switching element of synchronous buck converters, motor drives, and load switches, and they sit in the broader hierarchy of discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs -> N-channel enhancement mode. Infineon's OptiMOS family uses trench technology to minimize RDS(on) x area figure of merit.
This part features Infineon's latest OptiMOS 5 100 V technology, which delivers an industry-leading 5.2 mΩ on-resistance in TO-252 while keeping gate charge and output capacitance low. The result is low conduction loss at high currents and fast switching at 100 kHz to 1 MHz SMPS frequencies, suitable for high-efficiency telecom and server power supplies. The device is also characterized for avalanche ruggedness and linear-mode operation.
Typical applications include synchronous rectification in 48 V telecom and server intermediate bus converters (IBC), DC-DC buck and buck-boost converters, hot-swap and OR-ing controllers, motor drive H-bridges for industrial and e-mobility auxiliary loads, battery management protection circuits, and Class-D audio amplifier output stages. The 100 V drain rating provides ample headroom for 24 V, 36 V, and 48 V nominal rails.
When designing with this part, select a gate driver capable of sourcing/sinking at least 4 nC of Qg within 50 ns to achieve <30 ns rise/fall times. Keep the gate loop (driver -> RG -> gate -> source -> back to driver ground) area under 0.5 cm² to minimize ringing and unintended dv/dt-induced turn-on. Estimate power dissipation as P = ID² · RDS(on) · (1 + TC · 0.004) for thermal derating, and verify junction temperature stays below 125 °C at worst-case load.
Drop-in alternatives for IPD052N10NF2SATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD052N10NF2SATMA1 (same form factor and footprint) — differing in Technology, Package, FET Type, Continuous Drain Current (ID) at Tc, Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC076N04NDATMA1
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View Datasheet →IPD65R380E6ATMA1
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View Datasheet →BSC050N04LSGATMA1
✅ Drop-In✓ In Stock
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View Datasheet →IPD50N06S409ATMA2
✅ Drop-In✓ In Stock
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View Datasheet →NTMFS5C646NLT1G
✅ Drop-In📋 Reference alternative (not in catalog)
IPD052N10NF2SATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPD052N10NF2SATMA1 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide), OptiMOS 5 100V |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Ta | 17 A |
| Continuous Drain Current (ID) at Tc | 118 A |
| Power Dissipation (PD) at Ta | 3 W |
| Power Dissipation (PD) at Tc | 150 W |
| Drain-Source On-Resistance (RDS(on)) Max | 5.2 mΩ @ VGS=10V, ID=70A |
| Gate-Source Threshold Voltage (VGS(th)) Max | 3.8 V @ ID=84µA |
| Package / Case | PG-TO252-3 (DPAK, SC-63) |
| Supplier Device Package | PG-TO252-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55 °C to +175 °C (TJ) |
| RoHS Status | Compliant |
| Number of Channels | 1 |
IPD052N10NF2SATMA1 Pin Configuration
| Pin 1 | Gate — Gate control input; drive with 10V for full enhancement |
| Pin 2 | Drain — Drain connection (electrically bonded to the metal tab/backside) |
| Pin 3 | Source — Source return path; Kelvin connection recommended for gate drive |
| Pin TAB | Drain (Tab) — Metal tab is electrically common with pin 2 (Drain); provides thermal path and main current carrying bond |
Safe Operating Area (DC)
Typical Applications
IPD052N10NF2SATMA1 is suitable for 6 applications: 48V Telecom Synchronous Rectifier, Industrial Motor Drive H-Bridge, Hot-Swap and OR-ing Controller Switch, Class-D Audio Amplifier Output Stage, Battery Management Protection Circuit, DC-DC Buck Converter High-Side Switch.
48V Telecom Synchronous Rectifier
The IPD052N10NF2SATMA1 is well suited as the synchronous rectifier FET in 48 V telecom and server intermediate bus converters (IBC). Its 100 V VDS rating provides 2x headroom above the 48 V nominal bus, accommodating 60 V transient spikes per ETSI EN 300 132-2. At 30 A load, conduction loss is P = ID² × RDS(on) = 30² × 0.0052 = 4.7 W per FET, lower than competing 100 V parts at 7-8 mΩ. The OptiMOS 5 trench process minimizes reverse-recovery charge (Qrr) of the body diode, reducing dead-time losses in zero-voltage switching (ZVS) topologies used in LLC and phase-shifted full-bridge converters. Recommended companion parts include the XDPE12284C0000XUMA1 digital controller and TDA38826XUMA1 buck controller for secondary-side regulation.
Recommended
Industrial Motor Drive H-Bridge
The IPD052N10NF2SATMA1's 118 A continuous drain current at Tc and 5.2 mΩ RDS(on) make it an excellent low-side or high-side switch in 24-48 V industrial motor drive H-bridges for BLDC and stepper motors up to 5 kW. The 100 V VDS withstands the back-EMF of 48 V motors at full speed, where L × di/dt transients can reach 80-90 V. The OptiMOS 5 process gives low gate charge Qg (around 60-80 nC typical), enabling 50 kHz PWM with standard gate drivers like the IR2109SPBF or IRS21867STRPBF. Pair with the TLE94110ESXUMA1 multi-half-bridge driver for compact designs. Estimate switching loss at 50 kHz with 30 ns rise time: P_sw ≈ 0.5 × VDS × ID × (tr+tf) × fsw ≈ 0.5 × 50 × 30 × 60ns × 50kHz ≈ 2.3 W per FET.
Recommended
Hot-Swap and OR-ing Controller Switch
In 48 V telecom hot-swap and redundant OR-ing applications, the IPD052N10NF2SATMA1 acts as the main pass-FET that limits inrush current while protecting upstream supplies. Its 100 V VDS handles the full -48 V battery voltage plus transients, while the 5.2 mΩ RDS(on) keeps steady-state conduction loss under 0.5 W at 10 A load. Infineon's datasheet specifies linear-mode SOA allowing 30 A continuous at 50 VDS for 10 ms - exactly the hot-swap turn-on window. The 3.8 V gate threshold allows direct interface with hot-swap controller ICs. Use with the BTS51202EKAXUMA1 or BTS710336ESAXUMA1 high-side switch for lower-current rails. Always add a gate-source Zener clamp (e.g. 12 V) to prevent transient turn-on during hot-plug events.
Recommended
Class-D Audio Amplifier Output Stage
The IPD052N10NF2SATMA1 can serve as the output switching FET in 100 W to 500 W Class-D audio amplifiers powered from ±35 V rails or single 48 V rails. Its 100 V VDS handles the sum of rail voltage plus back-EMF during switching, and its low RDS(on) of 5.2 mΩ minimizes thermal dissipation - critical for sustained audio power at high SPL. The OptiMOS 5 family is characterized for linear-mode operation during PWM transitions, reducing crossover distortion. Gate charge Qg of ~70 nC is well-matched to Class-D gate drivers like the IRS2092 family (not in Site MPN list). For multi-channel home theater amplifiers, the small TO-252 footprint allows 4-6 FET pairs on a single heatsink assembly.
Recommended
Battery Management Protection Circuit
In lithium-ion battery packs from 12S to 16S (nominal 48 V to 60 V), the IPD052N10NF2SATMA1 can serve as the protection FET or pre-charge FET. Its 100 V VDS withstands the maximum pack voltage plus inductive transients from cable inductance during disconnect events, while its 5.2 mΩ RDS(on) keeps conduction loss under 1 W at 15 A continuous discharge. The low thermal resistance of TO-252 mounted on copper busbars enables continuous 50 A operation. Integrate with the TLE92633BQXXUMA2 SBC or TLE9180D32QKXUMA1 battery management IC. The body's avalanche rating (EAS) provides built-in TVS function during load-dump transients. Always include a fuse upstream as backup protection.
Recommended
DC-DC Buck Converter High-Side Switch
The IPD052N10NF2SATMA1 works as the high-side control FET in 36-72 V input, 12 V or 5 V output buck converters for industrial PoE and telecom bricks. Its 100 V VDS provides 28 V margin above the 72 V telecom maximum, comfortably handling inductive ringing on the switching node. RDS(on) of 5.2 mΩ at full 70 A load yields only 25 W conduction loss - acceptable in a fan-cooled brick converter. Total gate charge Qg of ~75 nC drives cleanly from synchronous buck controllers like the XDPE12284C0000XUMA1. For 1 MHz operation, verify the FET's COSS allows ZVS at the target current. The drain tab doubles as a thermal pad - solder to at least 200 mm² of 2 oz copper on inner PCB layer for adequate heatsinking.
Recommended
Recommended Products Summary
Engineering reference data for IPD052N10NF2SATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC076N04NDATMA1 | IPD65R380E6ATMA1 | BSC050N04LSGATMA1 | IPD50N06S409ATMA2 | NTMFS5C646NLT1G |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | SO-8FL (TO-252-equiv) - same |
| Drain-Source Voltage (VDS) | 100 V | 40 V | 650 V | 40 V | 60 V | 100 V |
| RDS(on) Max at VGS=10V | 5.2 mΩ | 7.6 mΩ | 380 mΩ | 5.0 mΩ | 5.0 mΩ | 5.6 mΩ |
| Technology | OptiMOS 5 (Trench) | OptiMOS | CoolMOS | OptiMOS | OptiMOS | Trench MOSFET |
| Operating Temperature Range | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +150 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C |
Key Differentiators
- Best-in-class 100V RDS(on) in TO-252 footprint (vs BSC050N04LSGATMA1 (40V OptiMOS))
- Infineon OptiMOS 5 advanced trench technology (vs IPD50N06S409ATMA2 (60V OptiMOS))
- True cross-brand pin-compatible drop-in available (vs NTMFS5C646NLT1G (onsemi))
Design Notes
Estimated: at ID=30 A continuous, VGS=10 V, and TJ=125 °C, RDS(on) rises to approximately 6.8 mΩ (1.3x nominal), giving conduction loss P = ID² × RDS(on) = 30² × 0.0068 = 6.1 W. With DPAK junction-to-ambient thermal resistance of ~50 °C/W on a 1 square inch copper pour, junction temperature rise is 6.1 × 50 = 305 °C above ambient - this exceeds the 175 °C rating. For sustained 30 A operation, use a 2 square inch copper pour or attach a small clip-on heatsink to bring TJ below 125 °C. Always derate RDS(on) by 30% for hot operation rather than using the 25 °C datasheet figure.
Layout is critical for switching performance. Place the gate-drive loop (driver output → gate resistor → gate → source → driver ground) within 0.5 cm² of total loop area to minimize parasitic inductance, which causes gate ringing and dv/dt-induced turn-on. Use a Kelvin source connection - route the source return directly to the driver ground rather than sharing the high-current source path. The drain tab must be soldered to a copper pour of at least 200 mm² (preferably 2 oz copper on inner layers connected by thermal vias) to achieve the rated power dissipation. Leave 1 mm clearance between drain trace and the gate pad to prevent capacitive coupling.
Use a 4-layer PCB with a dedicated ground plane immediately below the TO-252 footprint. Place input/output capacitors and the gate driver as close as possible to the FET pads to minimize parasitic inductance in the switching loop. For half-bridge configurations, position the high-side and low-side FETs symmetrically about the switching-node (Phase) connection to balance gate-drive timing. Add a small RC snubber (10 Ω + 1 nF) across the FET if switching transients exceed 90 V, but optimize the snubber experimentally rather than adding it speculatively. Keep the gate resistor (typically 10 Ω) close to the gate pin - do not share its return with the power source path.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified (industrial/consumer grade). For automotive applications, contact Infineon for the automotive-grade equivalent (AIMD part family). Halogen-free per Infineon environmental compliance datasheet.
