IPD068N10N3GATMA1 vs ISZ230N10NM6ATMA1 Comparison

Detailed side-by-side comparison of IPD068N10N3GATMA1 by Infineon and ISZ230N10NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISZ230N10NM6ATMA1

ISZ230N10NM6ATMA1 - 100V 31A OptiMOS 6 N-MOSFET | Infineon

ISZ230N10NM6ATMA1 βœ“ Active

Specification Comparison

Parameter IPD068N10N3GATMA1 ISZ230N10NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.71
Manufacturer Infineon Technologies β€”
Part Number IPD068N10N3GATMA1 β€”
Technology OptiMOS 3 (N-Channel, Enhancement Mode) OptiMOS 6 trench MOSFET
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc 90 A β€”
On-Resistance RDS(on) max 6.8 mOhm β€”
Power Dissipation (PD) at Tc 150 W β€”
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V (typical) 3.3 V (typ at 13 Β΅A)
Package PG-TO252-3 (DPAK, 2 leads + tab) PG-TSDSON-8 FL (3.3 x 3.3 mm)
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55 C to +175 C β€”
Channel Type N-Channel β€”
Configuration Single β€”
RoHS Status Compliant Compliant
MSL Level 1 MSL1 (per JEDEC J-STD-020)
Packing Tape & Reel (T/R) β€”
Qualification Industrial (non-automotive) β€”
Polarity / Channel Type β€” N-Channel
Continuous Drain Current (Ta) β€” 7.7 A
Continuous Drain Current (Tc) β€” 31 A
Power Dissipation (Ta) β€” 3 W
Power Dissipation (Tc) β€” 48 W
On-Resistance RDS(on) at VGS=10V β€” 23 mΞ© (typ, ID=10A)
Operating Temperature Range β€” -55 Β°C to +150 Β°C (junction)
Gate Drive Voltage (recommended) β€” 10 V
Family β€” OptiMOS 6 (100V class)

Datasheets & Resources

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