IPD082N10N3GATMA1 vs BSC0902NSIATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD082N10N3GATMA1 disebabkan oleh Infineon dan BSC0902NSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IPD082N10N3GATMA1 | BSC0902NSIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Part Number | IPD082N10N3GATMA1 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 3 (Trench N-Channel) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ Tc=25°C | 80 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10 V | 8.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) @ Tc=25°C | 125 W | — |
| Suhu Hubungan Operasi | -55°C to +175°C | — |
| Kemasan / Case | PG-TO252-3 (DPAK), surface mount | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Gate, Drain, Source) | — |
| Status RoHS | Compliant | Compliant |
| Automotive Qualified (AEC-Q101) | Not applicable (industrial/consumer grade) | — |
| Lead-Free | Yes | Yes |
| Aras MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Product Family | — | OptiMOS 30V |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TA=25C | — | 23 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 2.8 mOhm |
| Gate Charge QG(0V..10V) | — | 24 nC |
| Output Charge QOSS | — | 17 nC |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 48 W |
| Gambaran Suhu Operasi | — | -55C to +150C (junction) |
| Kemasan | — | PG-TDSON-8-6 (TDSON-8) |
| Built-in Diode | — | Yes (single with built-in diode) |
| Boson Bebas | — | Yes |