IRLR3915TRPBF - 55V 61A N-Channel HEXFET MOSFET | Infineon
MPN: IRLR3915TRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.05 | $1.05 |
| 10 | $0.85 | $8.50 |
| 100 | $0.62 | $62.00 |
| 500 | $0.48 | $240.00 |
| 1,000 | $0.4 | $400.00 |
IRLR3915TRPBF Overview
An N-channel power MOSFET is a voltage-controlled semiconductor switch in which a positive gate-to-source voltage creates a conductive channel between drain and source. It belongs to the broader family of field-effect transistors (FET -> MOSFET -> power MOSFET -> N-channel enhancement-mode MOSFET) and is the standard building block for switching-mode power conversion, motor control, and load management. Compared with older planar MOSFETs, HEXFET technology uses a cellular trench-style die layout to pack millions of parallel cells per cm², slashing on-resistance without enlarging the silicon.
The IRLR3915TRPBF's headline specifications are a 55 V drain-source breakdown, 14 mOhm maximum RDS(on) at 10 V VGS, 61 A continuous ID at 25°C, and a 175°C maximum junction temperature. Logic-level drive is supported by a low threshold voltage, allowing direct PWM from 3.3 V or 5 V microcontrollers without a gate-driver stage. The TO-252AA (DPAK) tab provides a low-thermal-resistance path (around 40°C/W with proper PCB copper) and is suitable for hand-soldered prototypes as well as high-volume SMD lines.
Internally, the die combines a HEXFET cell array, an internal gate resistor, and an ESD/zener-protected gate. The low gate charge (Qg ≈ 61 nC) keeps drive losses small, while the high repetitive-avalanche rating enables robust operation in inductive-switching applications such as solenoid PWM and DC motor drives. Avalanche-energy-rated parts are preferred over generic MOSFETs in circuits where the body diode must absorb unclamped inductive kickback.
Typical applications include high-current DC-DC converters, automotive and industrial solenoid drivers, brushless DC (BLDC) and brushed DC motor control, battery protection / reverse-polarity OR-ing, and high-side / low-side switching in power tools. The wide SOA and 175°C junction rating also suit hot environments like under-hood automotive electronics and LED driver stages.
When designing with the IRLR3915TRPBF, plan for adequate PCB copper under the DPAK tab to keep junction temperature below the derating curve at full load; at 30 A continuous, even a small RDS(on) × I² dissipation demands attention. Always add a gate-source pull-down resistor (typ. 10 kΩ) so the FET stays off during MCU reset, and verify SOA against the worst-case avalanche pulse in inductive loads.
This page synthesises distributor pricing, qualified drop-in alternatives, and practical DPAK thermal/layout design notes not assembled on a single manufacturer datasheet.
Drop-in alternatives for IRLR3915TRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRLR3915TRPBF (same form factor and footprint) — differing in Manufacturer, Package, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
AUIRLR3915TRL
✅ Drop-In📋 Reference alternative (not in catalog)
IRLR3915PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IPD30N06S2L13ATMA4
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →VBE1615
✅ Drop-In📋 Reference alternative (not in catalog)
IRLR3915TRPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Product Family | HEXFET Power MOSFET |
| Technology | IR MOSFET (HEXFET, advanced process) |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at TC=25C | 61 A |
| Continuous Drain Current (ID) at TC=100C | 30 A (Tc, per distributor listing) |
| On-Resistance RDS(on) max at VGS=10V | 14 mOhm |
| Total Gate Charge (Qg) | 61 nC |
| Logic-Level Gate Drive | Yes (logic-level compatible) |
| Power Dissipation (PD) at TC=25C | 120 W |
| Maximum Junction Temperature | 175 C |
| Operating Junction Temperature Range | -55 C to +175 C |
| Package | TO-252AA (DPAK), surface mount |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant (Pb-free PBF suffix) |
| MSL Level | 1 |
| Repetitive Avalanche Rating | Improved (per datasheet) |
| Switching Speed | Fast |
| Packaging | Tape & Reel (TR) |
| PBF / Lead-Free | Yes (PBF suffix = lead-free) |
IRLR3915TRPBF Pin Configuration
| Pin 1 | Gate (G) — MOSFET gate; logic-level compatible, drive to 10V for lowest RDS(on) |
| Pin 2 | Drain (D) — MOSFET drain; electrically bonded to the metal tab on the back |
| Pin 3 | Source (S) — MOSFET source; connect to gate-driver return and Kelvin-source if used |
| Pin TAB | Drain Tab — Exposed metal tab; electrically drain, thermally bonded to PCB copper for heatsinking |
Safe Operating Area (DC, TC=25C)
Typical Applications
IRLR3915TRPBF is suitable for 6 applications: DC-DC Buck / Boost Converter, Brushed DC Motor Drive (H-Bridge / Low-Side), Automotive Solenoid / Injector Driver, Battery Protection / Reverse-Polarity OR-ing, LED Driver / Lighting Power Stage, Hot-Swap / Inrush Current Limiter.
DC-DC Buck / Boost Converter
The IRLR3915TRPBF is well suited as the main switching FET in 12V-to-5V/3.3V buck converters and 12V-to-24V boost stages used in industrial and automotive power rails. Its 14 mOhm RDS(on) at 10 V VGS keeps conduction loss at roughly 12.6 W at 30 A, while 61 A continuous ID with 55 V VDS comfortably covers 12 V and 24 V bus designs with substantial transient margin. Compared with a Schottky-diode-rectified buck, the synchronous-rectifier configuration using a second IRLR3915TRPBF achieves >95% efficiency at moderate switching frequencies. The logic-level gate allows direct drive from a 3.3 V or 5 V PWM controller, eliminating an external gate-driver stage. Designers should size the DPAK copper pour to keep TC below 100°C at full load.
Recommended
Brushed DC Motor Drive (H-Bridge / Low-Side)
In brushed DC motor PWM drives - including power tools, robotics drives, and HVAC blowers - the IRLR3915TRPBF serves as either the low-side switch or one leg of an H-bridge. Its 14 mOhm RDS(on) and 61 A continuous ID handle stall-current surges up to 180 A pulsed when properly heatsunk. The improved repetitive-avalanche rating (per Infineon datasheet) tolerates the back-EMF kick from motor inductance during PWM commutation, eliminating the need for external snubbers in many designs. The TO-252AA package bolts directly to a small aluminium heatsink or a 1-2 square-inch copper pour for sustained 20-30 A operation. Logic-level gate drive lets an MCU's PWM pin switch the FET directly at frequencies up to 25 kHz.
Recommended
Automotive Solenoid / Injector Driver
The IRLR3915TRPBF's 55 V VDS comfortably clamps the flyback voltage of 12 V automotive solenoids (whose inductive kick can reach 40-60 V). For non-automotive-grade designs, the part's 30 A continuous ID at TC=100°C supports peak injector currents typical of fuel-rail solenoids. Designers targeting AEC-Q100 should instead select the AUIRLR3915TRL (same die, automotive-qualified flow) which is listed in the alternatives. The DPAK footprint tolerates the under-hood thermal environment (junction ratings to 175°C) provided the PCB tab is soldered to adequate copper. A 10 kOhm gate-source pull-down resistor is recommended to keep the FET off during ECU reset transients.
Recommended
Battery Protection / Reverse-Polarity OR-ing
In reverse-polarity protection and low-loss OR-ing between two supplies (e.g. battery + adapter), the IRLR3915TRPBF wired source-to-load with gate held high provides a far lower loss path than a Schottky diode. At 20 A load, conduction loss is roughly 5.6 W versus >10 W for a comparable Schottky, improving efficiency and reducing heatsink size. Its 55 V VDS is more than sufficient for 12 V and 24 V battery systems. The logic-level gate allows direct drive from a power-path controller IC. ESD-protected gate (per Infineon HEXFET family) survives hot-plug events on the battery rail. The DPAK package handles continuous 30 A in a compact footprint with modest copper.
Recommended
LED Driver / Lighting Power Stage
High-brightness LED drivers for automotive headlamps, industrial lighting, and architectural fixtures benefit from the IRLR3915TRPBF's combination of low RDS(on), logic-level drive, and high junction rating. As the linear pass element or PWM switch in a constant-current LED driver, it dissipates (VIN - VLED) × ILED watts, which at typical 12 V automotive and 24 V industrial supplies can reach 5-10 W per string. The DPAK tab on 1-2 square-inch copper sustains this load without active cooling. Fast switching supports PWM dimming frequencies above 1 kHz without audible flicker. Repetitive-avalanche rating handles the inductive kickback from the LED wiring harness, especially in long-cable installations.
Recommended
Hot-Swap / Inrush Current Limiter
In 12 V / 24 V hot-swap and eFuse circuits, the IRLR3915TRPBF serves as the series pass element that limits inrush into large bulk capacitors. With gate driven by an op-amp controller (dV/dt or current-limit loop), the FET's 14 mOhm RDS(on) keeps steady-state loss to roughly 5.6 W at 20 A. Its 61 A continuous ID comfortably handles momentary overloads during load-step transients, while the 175°C junction rating provides headroom against prolonged fault conditions. The DPAK footprint supports the modest PCB area typical of in-line power-path cards. Designers should add a TVS clamp on the drain to absorb disconnect transients and a gate Zener to limit VGS below 20 V.
Recommended
Recommended Products Summary
Engineering reference data for IRLR3915TRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | AUIRLR3915TRL | IRLR3915PBF | IPD30N06S2L13ATMA4 | VBE1615 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | vbsemi (originally Chinese-domestic) |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Drain-Source Voltage VDS max | 55 V | 55 V | 55 V | 55 V | 60 V |
| Logic-Level Gate Drive | Yes | Yes | Yes | Yes | Yes (per vbsemi listing) |
| Automotive Qualified (AEC-Q101) | No (industrial/commercial) | Yes | No | Yes (AEC-Q101) | No |
Key Differentiators
- Logic-level gate with very low RDS(on) at 10 V VGS (vs IRFB3207ZPBF (Infineon standard-gate HEXFET in same TO-220 family))
- High continuous ID with 175 C junction rating (vs IPD30N06S2L13ATMA4 (Infineon 55 V/30 A DPAK))
- Higher 60 V VDS with lower RDS(on) in same footprint (vs VBE1615 (Chinese-domestic DPAK, per vbsemi listing))
Design Notes
Estimated: at 30 A continuous drain current and 14 mOhm RDS(on), conduction loss is roughly 30² × 0.014 = 12.6 W. With DPAK theta_JA typically 40-50 C/W on 1 square-inch of 2 oz copper, junction temperature rises 500-630 C above ambient, which is unworkable. To stay below the 175 C junction limit, either reduce current, increase copper area to at least 4 square inches (theta_JA ~25 C/W -> 315 C rise at 12.6 W, still too hot), or attach an external heatsink. Practical guidance: keep dissipation below ~3 W (15 A at 14 mOhm) without an external heatsink.
The DPAK tab is the drain terminal AND the primary thermal path. Use a continuous copper pour under the tab at least 1 square inch (preferably 2-3 square inches) on the top layer, with thermal vias to inner copper planes. Keep the source pin (pin 3) trace short and direct to the gate-driver ground; long source inductance causes voltage spikes that can momentarily exceed VGS rating. Add a 10 kOhm gate-source resistor to keep the FET off during MCU reset or controller startup, and place a 100 nF ceramic bypass close to the gate-drive return.
Three frequent mistakes with this part: (1) Driving the gate directly from a 3.3 V MCU when RDS(on) spec requires 10 V - at 3.3 V VGS the FET may not fully enhance and RDS(on) rises 2-3x. (2) Forgetting that the maximum ratings are at TC=25C; at TC=100C ID drops to ~30 A, not 61 A. (3) Operating near 55 V VDS with inductive loads - even a 50 V inductive kick can exceed rating. Add a TVS or snubber across inductive loads, and stay below 80% of VDS max in steady state.
Compliance Information
Pb-free PBF suffix confirms RoHS compliance. Not AEC-Q100 qualified; choose AUIRLR3915TRL (or AUIRLR3915) for automotive applications. Halogen-free per Infineon product family datasheet.
