IPD50N04S408ATMA1 vs IPD5N25S3430ATMA1 Comparison
Detailed side-by-side comparison of IPD50N04S408ATMA1 by Infineon and IPD5N25S3430ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD50N04S408ATMA1 | IPD5N25S3430ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-T2 | — |
| Polarity | N-Channel | — |
| Mode | Enhancement-mode | — |
| Drain-Source Voltage (V DS) | 40 V | — |
| Continuous Drain Current (I D, Tc) | 50 A | — |
| Power Dissipation (P D, Tc) | 46 W | — |
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK, surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 °C to +175 °C | — |
| MSL Level | MSL1 (260 °C peak reflow) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Avalanche Tested | 100 % Avalanche tested | — |
| Green Package (RoHS) | RoHS compliant | — |
| Gate Threshold Voltage (V GS(th)) | [DATA_NEEDED: V GS(th) typical] | — |
| On-State Resistance (R DS(on)) | [DATA_NEEDED: R DS(on) at V GS = 10 V] | — |
| Total Gate Charge (Q G) | [DATA_NEEDED: Q G typical] | — |
| Transistor Type | — | N-Channel MOSFET |
| Technology | — | OptiMOS (planar-trench) |
| Drain-Source Voltage (VDS) | — | 250 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 5 A |
| Pulsed Drain Current (IDM) | — | 20 A |
| RDS(on) max @ VGS=10V | — | 430 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3 V typ / 4 V max |
| Input Capacitance (Ciss) | — | 422 pF typical |
| Power Dissipation (PD, Tc=25°C) | — | 41 W |
| Operating Junction Temperature | — | -55 °C to +175 °C |
| RoHS Status | — | ROHS3 Compliant |
| Lead Finish | — | Matte Tin (lead-free) |
| Configuration | — | Single, 3-pin (2+Tab) |