IPD50N06S409ATMA2 vs IPB081N06L3GATMA1 Comparison

Detailed side-by-side comparison of IPD50N06S409ATMA2 by Infineon and IPB081N06L3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD50N06S409ATMA2 IPB081N06L3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.49 $0.95
Technology N-Channel MOSFET (OptiMOS) OptiMOS 3 (low-voltage power MOSFET)
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Tc 50 A β€”
On-Resistance R<sub>DS(on)</sub> max at VGS=10V 9 mΞ© β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] 1.2 V min, 2.1 V typ, 2.6 V max
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] β€”
Power Dissipation (Pd) at Tc 71 W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Package PG-TO252-3-11 (DPAK) PG-TO263-3 (D2PAK)
Pin Count 3 (2 + Tab) β€”
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 β€”
RoHS Status Compliant Compliant
Lead-Free / Halogen-Free [DATA_NEEDED] β€”
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS 3
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at Tc=25C β€” 50 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current rating]
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max rating]
On-Resistance RDS(on) at VGS=10V β€” 8.1 mOhm typical
Maximum Power Dissipation (Pd) at Tc=25C β€” 79 W
Operating Temperature Range β€” -55 C to +175 C (junction)
Number of Pins β€” 3
Pin Configuration β€” Gate / Drain / Source (D2PAK standard)
MSL Level β€” 1 (unlimited)

Datasheets & Resources

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