IPB081N06L3GATMA1 - 60V 50A OptiMOS 3 N-Channel MOSFET | Infineon
MPN: IPB081N06L3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.95 | $950.00 |
Drop-in alternatives for IPB081N06L3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB070N06L3G
✅ Drop-In📋 Reference alternative (not in catalog)
IPB090N06N
✅ Drop-In📋 Reference alternative (not in catalog)
BSC090N06NSATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSC028N06NSTATMA1
✅ Drop-In✓ In Stock
$0.4 / Unit
View Datasheet →IPB021N10NM5LF2ATMA1
✅ Drop-In✓ In Stock
$2.75 / Unit
View Datasheet →IPD031N03LGATMA1
✅ Drop-In✓ In Stock
$0.41 / Unit
View Datasheet →IPB081N06L3GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 3 |
| Transistor Type | N-Channel MOSFET |
| Package | PG-TO263-3 (D2PAK) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Tc=25C | 50 A |
| Gate Threshold Voltage (VGS(th)) | 1.2 V min, 2.1 V typ, 2.6 V max |
| On-Resistance RDS(on) at VGS=10V | 8.1 mOhm typical |
| Maximum Power Dissipation (Pd) at Tc=25C | 79 W |
| Operating Temperature Range | -55 C to +175 C (junction) |
| Mounting Type | Surface Mount |
| Number of Pins | 3 |
| Pin Configuration | Gate / Drain / Source (D2PAK standard) |
| Technology | OptiMOS 3 (low-voltage power MOSFET) |
| RoHS Status | Compliant |
| MSL Level | 1 (unlimited) |
IPB081N06L3GATMA1 Pin Configuration
| Pin 1 | Gate — Gate input; logic-level drive from 4.5V |
| Pin 2 | Drain — Drain terminal; electrically bonded to the metal tab |
| Pin 3 | Source — Source terminal; ground reference for gate drive |
Safe Operating Area (DC, Tc=25C)
Typical Applications
IPB081N06L3GATMA1 is suitable for 6 applications: 48V Automotive Bus Switching, Synchronous Rectification in Isolated DC-DC Converters, BLDC Motor Drive Half-Bridge, Hot-Swap and ORing in Telecom 48V Rails, Battery Protection and Load Switching, Industrial 24V Load Switch and Solenoid Driver.
48V Automotive Bus Switching
The IPB081N06L3GATMA1's 60V VDS rating provides comfortable margin above the 48V automotive bus with inductive transient headroom for load dump events. Its 50A continuous drain current and 8.1 mOhm typical RDS(on) at VGS=10V keep conduction dissipation to about 20W at full load (I^2R = 50^2 x 0.0081), manageable on a properly copper-spread D2PAK tab. Placed between the 48V rail and downstream subsystems as a high-side switch, it enables ECU-controlled power gating with sub-microsecond turn-off for fault isolation. The OptiMOS 3 cell structure delivers low Qg (typically tens of nC) so a compact gate driver can switch it at 25 kHz without excessive drive loss.
Recommended
Synchronous Rectification in Isolated DC-DC Converters
In the secondary side of 24V-input isolated DC-DC converters, the IPB081N06L3GATMA1 functions as a synchronous rectifier MOSFET replacing lossy Schottky diodes. The 8.1 mOhm RDS(on) and 60V rating handle 24V bus-derived outputs up to 30V with substantial transient margin. Its low Qg reduces dead-time body-diode conduction losses, allowing converter efficiencies above 96 percent at 200W output. Two devices in a half-bridge configuration can deliver 50A continuous to the load with the D2PAK tab providing direct PCB thermal coupling. Gate drive timing must be carefully matched with the primary-side control to prevent shoot-through.
Recommended
BLDC Motor Drive Half-Bridge
In three-phase brushless DC motor drive inverters, the IPB081N06L3GATMA1 serves as the low-side or high-side switch in each half-bridge leg. With 50A continuous current capability, it can drive fractional-horsepower motors up to about 2 kW without paralleling devices. The 60V VDS rating covers 24V and 36V battery packs with comfortable avalanche energy margin for the motor's inductive kickback. Switching losses are minimized by the OptiMOS 3 cell architecture, allowing PWM frequencies up to 50 kHz for smoother torque ripple. Six MOSFETs in a three-phase inverter can be driven from a single three-phase gate driver IC.
Recommended
Hot-Swap and ORing in Telecom 48V Rails
In -48V telecom systems where the negative rail is actually system ground, the IPB081N06L3GATMA1 is ideal for ORing MOSFETs and hot-swap controller pass elements. Its 60V VDS comfortably exceeds the 48V working voltage with derating margin. The 8.1 mOhm RDS(on) minimizes voltage drop in the ORing path - at 30A load, dissipation is about 7.3W which the D2PAK tab can handle with appropriate copper. Used in conjunction with a hot-swap controller IC, the MOSFET provides inrush current limiting during board insertion, protecting backplane connectors and downstream bulk capacitors.
Recommended
Battery Protection and Load Switching
In multi-cell battery packs (4S to 13S lithium-ion), the IPB081N06L3GATMA1 can serve as the main discharge MOSFET with its 60V rating covering packs up to 13S (54.6V maximum). The 50A continuous rating supports high-power tool and e-mobility battery packs. Its low RDS(on) reduces pack internal resistance, improving usable capacity under high load. The part also handles reverse polarity protection when placed in series with the load path. Gate drive can be derived from a low-current LDO fed from the pack itself, with a microcontroller controlling EN via a dedicated gate driver.
Recommended
Industrial 24V Load Switch and Solenoid Driver
In industrial automation systems running on 24V rails, the IPB081N06L3GATMA1 directly drives solenoids, relays, and high-current actuators with its 50A capability. The 60V VDS rating handles the inductive flyback of unipolar solenoids when paired with a flyback diode, or it can absorb the avalanche energy directly when avalanche-rated. The D2PAK package mounts on the backplane or DIN-rail PCB, providing thermal mass for repetitive switching. Logic-level gate threshold (1.2V min) means a standard 5V PLC output or 3.3V GPIO can drive the gate directly through a small gate resistor.
Recommended
Recommended Products Summary
Engineering reference data for IPB081N06L3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB070N06L3G | IPB090N06N | BSC090N06NSATMA1 | BSC028N06NSTATMA1 | IPB021N10NM5LF2ATMA1 | IPD031N03LGATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 footprint variant - verify | PG-TO263-3 footprint - verify | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same |
| Brand | Infineon | Infineon - same brand | Infineon - same brand | Infineon - same brand | Infineon - same brand | Infineon - same brand | Infineon - same brand |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 60 V | 60 V | 60 V | 100 V | 30 V |
| Continuous Drain Current (ID) | 50 A | 50 A | 50 A (typ) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| RDS(on) typical at VGS=10V | 8.1 mOhm | 7.0 mOhm | 9.0 mOhm | 9.0 mOhm | 2.8 mOhm | 2.1 mOhm | 3.1 mOhm |
| Technology Generation | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS |
| Maximum Power Dissipation (Pd) | 79 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Logic-Level Gate Drive | Yes (VGS=4.5V capable) | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Lowest RDS(on) in OptiMOS 3 60V D2PAK family at mainstream price point (vs IPB070N06L3G)
- Mature OptiMOS 3 platform with broad qualification (vs IPB090N06N (OptiMOS 5))
- Single-source Infineon D2PAK with broad distributor stock (vs BSC090N06NSATMA1 (Infineon SuperSO8))
Design Notes
Estimated: at 30A continuous current and RDS(on)=8.1 mOhm, conduction dissipation is approximately 7.3W (P = I^2 x R). The D2PAK package has thermal resistance junction-to-case of approximately 0.95 C/W, so Tj rises about 7C above Tc at this load. Designers must size the PCB copper pour under the tab to keep total junction-to-ambient thermal resistance below 20 C/W - typically requiring at least 1 square inch of 2oz copper. Without adequate copper, the part will thermal-limit well below its rated 50A in still air.
Place the IPB081N06L3GATMA1 with its tab on a minimum 1oz copper pour spanning at least the footprint pad plus 10mm of perimeter copper. Use multiple thermal vias (0.3mm drill, 1mm pitch) directly under the tab to inner PCB ground planes for heat sinking. Gate-drive traces should be kept short (under 25mm) and routed away from drain switching nodes to minimize Miller coupling. Place the gate resistor (typically 10-47 ohm) within 5mm of the gate pin to dampen parasitic ringing.
The D2PAK tab is electrically bonded to the Drain pin - do not connect the tab to Source or signal ground, as this will short the drain path. Do not exceed VGS=+/-20V absolute maximum, even briefly - use a gate-source Zener clamp (e.g. 15V) for protection against gate-drive overshoot. When paralleling multiple MOSFETs for higher current, matched gate resistors and a Kelvin source connection (if available) are required to prevent oscillation and current hogging.
Estimated: for switching frequencies above 50 kHz, the gate loop inductance (drain-source capacitance charging path) should be minimized by placing the gate driver within 10mm of the MOSFET gate pin. Use a ground plane directly under the driver IC and stitch the source return back to the driver ground via the shortest possible path. The switching node (drain-to-transformer or drain-to-inductor) should have minimal loop area to limit EMI - keep the high-di/dt loop area below 1 square centimeter where possible.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified as a standalone part number - see automotive-qualified variants in the OptiMOS 3 family. Halogen-free per JEDEC JS709B. Conflict minerals declaration available from Infineon.
