IPD60R600C6ATMA1 vs IPD600N25N3GATMA1 Comparison

Detailed side-by-side comparison of IPD60R600C6ATMA1 by Infineon and IPD600N25N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD60R600C6ATMA1 IPD600N25N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.92 $0.84
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C6 —
Part Suffix ATMA1 (Tape & Reel) —
Transistor Type N-Channel MOSFET N-Channel MOSFET
Technology CoolMOS C6 (Superjunction) OptiMOS 3 trench MOSFET
Drain-Source Voltage (VDS) 600 V 250 V
Gate-Source Voltage (VGS) Max ±20 V —
Continuous Drain Current (ID) at TC=25°C 7.3 A —
Continuous Drain Current (ID) at TC=100°C [DATA_NEEDED: ID at TC=100°C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) Max at VGS=10V 600 mΩ —
Total Power Dissipation (Ptot) at TC=25°C 63 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Operating Temperature Range -55 °C to +150 °C —
Package PG-TO252-3 (DPAK) PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount
Mounting Type Surface Mount Surface Mount (Tape & Reel)
Number of Pins 3 (Gate, Drain, Source) —
RoHS Status Compliant —
MSL Level 1 —
Part Series — OptiMOS 3
Continuous Drain Current (ID) at Tc — 25 A
Power Dissipation (PD) at Tc — 136 W
On-Resistance RDS(on) max — 60 mOhm at VGS = 10 V
Gate Threshold Voltage — [DATA_NEEDED: VGS(th) typical/min/max]
Operating Junction Temperature — -55 C to +175 C
Lead Plating — Pb-free
RoHS Compliance — Compliant
Halogen Free — Yes, per IEC 61249-2-21
JEDEC Qualification — Qualified for target application

Datasheets & Resources

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