IPD60R600C6ATMA1 vs IPD600N25N3GATMA1 对比
详细并排对比 IPD60R600C6ATMA1 出自 Infineon 和 IPD600N25N3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD60R600C6ATMA1 | IPD600N25N3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.92 | $0.84 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C6 | — |
| Part Suffix | ATMA1 (Tape & Reel) | — |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Technology | CoolMOS C6 (Superjunction) | OptiMOS 3 trench MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 250 V |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Continuous Drain Current (ID) at TC=25°C | 7.3 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) Max at VGS=10V | 600 mΩ | — |
| Total Power Dissipation (Ptot) at TC=25°C | 63 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| 工作温度范围 | -55 °C to +150 °C | — |
| 封装 | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount |
| 安装类型 | Surface Mount | Surface Mount (Tape & Reel) |
| 引脚数 | 3 (Gate, Drain, Source) | — |
| RoHS 状态 | Compliant | — |
| MSL 等级 | 1 | — |
| Part Series | — | OptiMOS 3 |
| Continuous Drain Current (ID) at Tc | — | 25 A |
| Power Dissipation (PD) at Tc | — | 136 W |
| On-Resistance RDS(on) max | — | 60 mOhm at VGS = 10 V |
| 栅极阈值电压 | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| 工作结温 | — | -55 C to +175 C |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| 无卤 | — | Yes, per IEC 61249-2-21 |
| JEDEC Qualification | — | Qualified for target application |