IPD65R380E6ATMA1 vs IPD028N06NF2SATMA1 Comparison

Detailed side-by-side comparison of IPD65R380E6ATMA1 by Infineon and IPD028N06NF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD65R380E6ATMA1 IPD028N06NF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ E6 —
Transistor Type N-Channel MOSFET N-Channel MOSFET
Technology Superjunction (CoolMOS™) —
Drain-Source Voltage (V_DS) 650 V —
Continuous Drain Current (I_D) at T_C 10.6 A —
R_DS(on) max at V_GS=10V 380 mΩ —
R_DS(on) test conditions 3.2 A, 10 V —
Gate-Source Voltage (V_GS) max ±20 V —
Gate Threshold Voltage (V_GS(th)) 3.5 V typ —
Gate Charge (Q_G) 39 nC at 10 V —
Input Capacitance (C_iss) 710 pF at 100 V —
Power Dissipation (P_D) at T_C 83 W —
Operating Temperature Range -55 °C to +150 °C —
Package PG-TO252-3 (DPAK), surface mount PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
MSL Level 1 1 (per JEDEC J-STD-020)
Part Number — IPD028N06NF2SATMA1
Technology Family — OptiMOS 5 60V
Drain-Source Voltage (VDS) max — 60 V
Continuous Drain Current (ID) at TA=25°C — 24 A
Continuous Drain Current (ID) at TC=25°C — 139 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) typ @ VGS=10V — 2.85 mΩ
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typ]
Power Dissipation at TA=25°C — 3 W
Power Dissipation at TC=25°C — 150 W
Operating Junction Temperature Range — -55 C to +175 C
Pin Count — 3 (Gate, Drain-tab, Source)
Packing — Tape & Reel (T&R)

Datasheets & Resources

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