IPD65R380E6ATMA1 vs IPD028N06NF2SATMA1 Perbandingan

Perbandingan bersamaan detil IPD65R380E6ATMA1 dari Infineon dan IPD028N06NF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD65R380E6ATMA1 IPD028N06NF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ E6 —
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Technology Superjunction (CoolMOS™) —
Drain-Source Voltage (V_DS) 650 V —
Continuous Drain Current (I_D) at T_C 10.6 A —
R_DS(on) max at V_GS=10V 380 mΩ —
R_DS(on) test conditions 3.2 A, 10 V —
Gate-Source Voltage (V_GS) max ±20 V —
Gate Threshold Voltage (V_GS(th)) 3.5 V typ —
Gate Charge (Q_G) 39 nC at 10 V —
Input Capacitance (C_iss) 710 pF at 100 V —
Power Dissipation (P_D) at T_C 83 W —
Rentang Suhu Kerja -55 °C to +150 °C —
Paket PG-TO252-3 (DPAK), surface mount PG-TO252-3 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Level MSL 1 1 (per JEDEC J-STD-020)
Part Number — IPD028N06NF2SATMA1
Technology Family — OptiMOS 5 60V
Drain-Source Voltage (VDS) max — 60 V
Continuous Drain Current (ID) at TA=25°C — 24 A
Continuous Drain Current (ID) at TC=25°C — 139 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) typ @ VGS=10V — 2.85 mΩ
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typ]
Power Dissipation at TA=25°C — 3 W
Power Dissipation at TC=25°C — 150 W
Rentang Suhu Hubung Kerja — -55 C to +175 C
Jumlah Pin — 3 (Gate, Drain-tab, Source)
Packing — Tape & Reel (T&R)

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