IPD90P04P405ATMA2 - P-Channel 40V 90A OptiMOS MOSFET | Infineon
MPN: IPD90P04P405ATMA2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.35 | $1.35 |
| 10 | $1.18 | $11.80 |
| 100 | $0.98 | $98.00 |
| 500 | $0.82 | $410.00 |
| 1,000 | $0.69 | $690.00 |
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View Datasheet →IPD90P04P405ATMA2 Maximum Ratings & Electrical Characteristics
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -40 V |
| Continuous Drain Current (ID, Tc) | -90 A |
| Power Dissipation (PD, Tc) | 125 W |
| On-Resistance RDS(on) at VGS = -10 V | 4.7 mΩ (typical) |
| Gate-Source Voltage (VGS) max | ±20 V |
| Operating Temperature Range | -55 °C to +175 °C (Tj) |
| Package | PG-TO252-3-313 (DPAK, surface mount) |
| Mounting Type | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) |
| Process Technology | OptiMOS-P2 (trench + field plate) |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
IPD90P04P405ATMA2 Pin Configuration
| Pin 1 | Gate — MOSFET gate drive input (pull low to turn ON) |
| Pin 2 | Drain — MOSFET drain; connected to tab for thermal dissipation |
| Pin 3 | Source — MOSFET source (typically tied to battery +V in high-side P-channel configuration) |
Safe Operating Area (estimated from datasheet DC curve)
Typical Applications
IPD90P04P405ATMA2 is suitable for 6 applications: 12V Automotive High-Side Load Switch, Reverse-Polarity Protection, DC Motor Drive H-Bridge (High-Side), USB-PD and Battery Management Load Switch, LED Driver High-Side Switch (Automotive), Industrial 24V Solenoid and Valve Driver.
12V Automotive High-Side Load Switch
The IPD90P04P405ATMA2 is ideally suited for 12 V automotive high-side switching because its P-channel polarity eliminates the bootstrap or charge-pump circuitry required by an N-channel high-side switch. With VDS = -40 V it tolerates 12 V battery transients (load-dump up to 35 V) with comfortable margin, and the 4.7 mΩ RDS(on) at VGS = -10 V keeps conduction loss low even at 30-50 A continuous currents. Typical use is body-control modules switching headlamps, seat heaters, or fuel pumps. Place the part between the battery +12 V rail and the load, with a 100 kΩ pull-up on the gate to default OFF and a low-side NPN driver or gate-driver IC to pull the gate to ground for ON. Unlike an N-channel high-side solution, no bootstrap capacitor or level-shifter is required, reducing BOM cost and PCB area.
Recommended
Reverse-Polarity Protection
The IPD90P04P405ATMA2 serves as a high-current reverse-polarity protection element in 12 V/24 V systems, replacing traditional Schottky diodes to cut conduction loss by an order of magnitude. At 10 A forward current a Schottky diode drops ~0.5 V (5 W loss), whereas the P-channel MOSFET drops Iload × RDS(on) = 10 A × 4.7 mΩ = 47 mV (0.47 W loss) - a 10× efficiency improvement. Wire the source to the battery, drain to the load, and gate to ground through a resistor; if polarity reverses, the gate-source becomes forward-biased on the body diode and the channel stays off. The 90 A continuous rating allows the part to handle engine-cranking inrush currents, and the -40 V VDS provides margin for inductive flyback transients on automotive loads.
Recommended
DC Motor Drive H-Bridge (High-Side)
The IPD90P04P405ATMA2 functions as the high-side switch in an H-bridge driving 12 V brushed DC motors up to ~30 A continuous. The P-channel configuration simplifies the gate-drive design compared to N-channel high-side bridges, which require bootstrap capacitors that struggle at >98% duty cycle. At VGS = -10 V the 4.7 mΩ RDS(on) keeps the high-side voltage drop to ~140 mV at 30 A (4.2 W dissipation per switch), well within the 125 W rating. For PWM frequencies up to 25 kHz the low gate charge enables clean switching edges. Pair this part with a complementary N-channel low-side MOSFET such as IRF1405PBF and a half-bridge driver like IRS2184SPBF for a robust 12 V/30 A motor driver stage.
Recommended
USB-PD and Battery Management Load Switch
For USB-PD sink paths, e-Mobility battery management, and 1S-4S Li-ion battery protection circuits, the IPD90P04P405ATMA2 acts as a low-loss load switch between the pack and the system rail. Its 4.7 mΩ RDS(on) at -10 V VGS allows 5 A continuous with only 24 mV drop, well below USB-PD's voltage-tolerance budget. The P-channel drive means a single GPIO pulled low enables the switch, simplifying firmware sequencing. In battery protection the part handles inrush from charged output capacitors and supports hot-plug events. The 90 A pulsed rating accommodates 5V/3A USB-PD PPS negotiation surges. Place a TVS diode such as SMAJ33CA across the drain-source for ESD and transient suppression in handheld applications.
Recommended
LED Driver High-Side Switch (Automotive)
In automotive LED headlamp and tail-lamp drivers, the IPD90P04P405ATMA2 provides high-side PWM dimming with low thermal load. Driving LEDs from the high side using a P-channel MOSFET allows the LED string common-anode to return directly to chassis ground, simplifying PCB layout and avoiding ground-shift artifacts. At a PWM frequency of 200 Hz to 1 kHz and 50% duty cycle at 5 A average LED current, the part dissipates 0.5 × 5² × 0.0047 = 0.06 W per switch - negligible. The 40 V VDS rating protects against load-dump and jump-start transients up to 35 V on 12 V systems, and the DPAK package easily dissipates the resulting heat without a heatsink.
Recommended
Industrial 24V Solenoid and Valve Driver
The IPD90P04P405ATMA2 enables 24 V industrial solenoid and proportional-valve drivers where reverse-polarity protection and high inrush handling are required. Solenoids draw 5-10× their holding current at turn-on (10-30 A pulses), well within the part's 90 A continuous rating when pulsed for <100 ms. The P-channel high-side connection keeps the solenoid return at chassis ground, eliminating ground loops in distributed I/O. The 4.7 mΩ RDS(on) keeps steady-state dissipation below 1 W per switch even at 15 A holding current, and the wide -55 °C to +175 °C Tj range supports outdoor cabinet installations. A flyback diode across the solenoid or an active clamp using a TVS handles inductive kickback at turn-off.
Recommended
Recommended Products Summary
Engineering reference data for IPD90P04P405ATMA2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD90P04P4L04ATMA2 | IPD60P06P360ATMA2 | IPD90P03P4L04ATMA1 | IPD50P04P413ATMA2 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same-brand) | Infineon (same-brand) | Infineon (same-brand) | Infineon (same-brand) |
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -40 V | -40 V | -60 V | -40 V | -40 V |
| Continuous Drain Current (ID) | -90 A | -90 A | -60 A | -90 A | -50 A |
| On-Resistance RDS(on) at VGS = -10 V | 4.7 mΩ | 4.7 mΩ | 6 mΩ | 4.7 mΩ | 5 mΩ |
| Power Dissipation (PD, Tc) | 125 W | 125 W | 100 W | 125 W | 115 W |
| Process Technology | OptiMOS-P2 | OptiMOS-P2 (lower Qg) | OptiMOS-P | OptiMOS-P2 (lower Qg) | OptiMOS-P |
| Unit Price (qty 1, as of 2026-09-14) | $1.35 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | $1.10 (approx.) |
Key Differentiators
- Lowest RDS(on) in Infineon -40 V P-channel DPAK family (vs IPD60P06P360ATMA2)
- OptiMOS-P2 process technology (vs IPD50P04P413ATMA2)
- Higher current rating than voltage-rated alternatives (vs IPD60P06P360ATMA2)
- P-channel polarity simplifies high-side drive (vs IRF1405PBF (N-channel))
Design Notes
Estimated: at VGS = -10 V, ID = 30 A continuous in free air with a 1 oz copper 1 in² pad on a 4-layer FR4 board, the DPAK junction-to-ambient thermal resistance is approximately 50 °C/W. Conduction loss is I² × RDS(on) = 30² × 0.0047 = 4.2 W, producing a ~210 °C junction temperature rise above 25 °C ambient - well above the 175 °C Tj max. Derate to 20 A continuous or add a heatsink/2 oz copper pour to stay within thermal limits.
Place the DPAK drain tab on a copper pour equal to at least 1 square inch of 1 oz copper to act as the primary heat sink. Route the high-current source trace on the top layer to minimize parasitic inductance. Keep the gate trace short and away from the drain switching node; add a 10 kΩ gate-source resistor to prevent accidental turn-on from Miller-induced dv/dt. Use a star-ground topology if multiple high-current switches share the same return path.
Do not exceed ±20 V VGS - the gate oxide will be permanently damaged. Do not operate the device in linear mode (VDS between 1 V and VDSmax with continuous high current) for more than a few milliseconds - the SOA curve drops sharply above 5 V. Always provide a TVS or flyback path across inductive loads; the P-channel MOSFET's body diode is rated for average forward current only. Finally, verify the gate-drive pull-down can sink the miller current during turn-off (a 1 kΩ gate resistor with a 10 mA driver suffices).
For PWM applications above 20 kHz, add a small RC snubber (10 Ω + 1 nF) across drain-source to slow the switching edge and reduce ringing on the parasitic drain inductance. A gate-source ferrite bead or 100 Ω resistor in series with the gate can dampen high-frequency gate oscillations. Keep the source inductance below 5 nH by using a wide, short source-return trace directly to the load ground.
Compliance Information
Automotive-qualified per Infineon OptiMOS-P2 family datasheet; AEC-Q100 Grade 1 capable. RoHS and REACH compliant per Infineon product page. Halogen-free per JEDEC JS709B definition.
